Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor

Naito, T.; Nishimura, R.; Yamada, M.; Masago, A.; Shiratsuchi, Y.; Wagatsuma, Y.; Sawano, K.; Nakatani, R.; Oguchi, T.; Hamaya, K.

doi:https://doi.org/10.1103/PhysRevB.105.195308

Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor

Naito, T.; Nishimura, R.; Yamada, M. et al.

Physical Review B, 2022, 105(19), 195308

アクセス数:178件（2025-03-14 17:51 集計）

固定URL: https://hdl.handle.net/11094/89428

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タイトル	Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor
著者	著者名 Naito, T.
	著者名 Nishimura, R.
	著者名 Yamada, M.
	著者名 Masago, A.
	著者名 Shiratsuchi, Y.
	著者名 Wagatsuma, Y.
	著者名 Sawano, K.
	著者名 Nakatani, R.
	NRID 1000090253054 1000090253054 researchmap permalink _BAND _BAND Scopus Author ID 7102491594 7102491594 著者名 Oguchi, T.
	NRID 1000090401281 1000090401281 ORCID 0000-0002-5473-6086 0000-0002-5473-6086 researchmap permalink read0102192 read0102192 Scopus Author ID 9244846800 9244846800 著者名 Hamaya, K.
内容	T. Naito, R. Nishimura, M. Yamada, A. Masago, Y. Shiratsuchi, Y. Wagatsuma, K. Sawano, R. Nakatani, T. Oguchi, and K. Hamaya, Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor, Phys. Rev. B 105, 195308.
抄録	Using controlled ferromagnet (FM) -semiconductor (SC) interfaces in SC-based lateral spin-valve (LSV) devices, we experimentally study the effect of interfacial spin moments in FM-SC heterojunctions on spin transport in SC. First-principles calculations predict that the spin moment of FM-SC junctions can be artificially reduced by inserting 3d transition metal V, Cr, or Cu atomic layers between FM and SC. When all-epitaxial FM-SC Schottky-tunnel contacts with a 0.4-0.5-nm-thick V, Cr, or Cu interfacial layer are formed, we find that the spin signals in FM-SC LSV devices are significantly decreased at 8 K. When we increase the interfacial spin moment by inserting an ∼0.3-nm-thick Co layer between FM and SC, the spin signals at 8 K are significantly enhanced again. From these experiments, we conclude that the interfacial spin moments at FM-SC interfaces are one of the important factors to achieve large spin signals even in SC-based spintronic devices.
出版者	American Physical Society
収録物名	Physical Review B
巻(号)	105(19)
ページ	195308
刊行年月	2022-05-13
言語	英語
ハンドルURL	https://hdl.handle.net/11094/89428
PISSN	24699950
eISSN	24699969
NCID	AA11187113
関連情報 (isIdenticalTo)	DOI (出版社版) https://doi.org/10.1103/PhysRevB.105.195308
アクセス権	open access
権利情報	Copyright 2022 by the American Physical Society
出版タイプ	Version of Record
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Physical Review B. 2022, 105(19), p. 195308
DC.title	Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor
DC.creator	Naito, T.
	Nishimura, R.
	Yamada, M.
	Masago, A.
	Shiratsuchi, Y.
	Wagatsuma, Y.
	Sawano, K.
	Nakatani, R.
	Oguchi, T.
	Hamaya, K.
DC.publisher	American Physical Society
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2022-05-13
DC.identifier	https://doi.org/10.1103/PhysRevB.105.195308
DC.description	T. Naito, R. Nishimura, M. Yamada, A. Masago, Y. Shiratsuchi, Y. Wagatsuma, K. Sawano, R. Nakatani, T. Oguchi, and K. Hamaya, Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor, Phys. Rev. B 105, 195308.
DCTERMS.abstract	Using controlled ferromagnet (FM) -semiconductor (SC) interfaces in SC-based lateral spin-valve (LSV) devices, we experimentally study the effect of interfacial spin moments in FM-SC heterojunctions on spin transport in SC. First-principles calculations predict that the spin moment of FM-SC junctions can be artificially reduced by inserting 3d transition metal V, Cr, or Cu atomic layers between FM and SC. When all-epitaxial FM-SC Schottky-tunnel contacts with a 0.4-0.5-nm-thick V, Cr, or Cu interfacial layer are formed, we find that the spin signals in FM-SC LSV devices are significantly decreased at 8 K. When we increase the interfacial spin moment by inserting an ∼0.3-nm-thick Co layer between FM and SC, the spin signals at 8 K are significantly enhanced again. From these experiments, we conclude that the interfacial spin moments at FM-SC interfaces are one of the important factors to achieve large spin signals even in SC-based spintronic devices.
DC.rights	Copyright 2022 by the American Physical Society
DC.format	89428
citation_title	Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor
citation_author	Naito, T.
	Nishimura, R.
	Yamada, M.
	Masago, A.
	Shiratsuchi, Y.
	Wagatsuma, Y.
	Sawano, K.
	Nakatani, R.
	Oguchi, T.
	Hamaya, K.
citation_publisher	American Physical Society
citation_language	英語
citation_date	2022-05-13
citation_journal_title	Physical Review B
citation_volume	105
citation_issue	19
citation_firstpage	195308
citation_doi	https://doi.org/10.1103/PhysRevB.105.195308
citation_public_url	https://hdl.handle.net/11094/89428

Significant effect of interfacial spin moments in ferromagnet-semiconductor heterojunctions on spin transport in a semiconductor

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