学術雑誌論文

学術雑誌論文

text

Journal of Magnetism and Magnetic Materials. 2022, 561, p. 169644

Epitaxial Mn₂VAl films with L2₁-ordered structure for all-Heusler stacks

Elsevier B.V.

英語

text

2022-11-01

https://doi.org/10.1016/j.jmmm.2022.169644

Shinya Yamada, Kohei Kudo, Ryosuke Sadakari, Kohei Hamaya, Epitaxial Mn₂VAl films with L2₁-ordered structure for all-Heusler stacks, Journal of Magnetism and Magnetic Materials, 561, 2022, 169644.

The structural and magnetic properties of epitaxial Mn₂VAl films grown by molecular beam epitaxy are investigated. Epitaxial Mn₂VAl films with a relatively high L2₁-ordering of ∼0.7 are obtained on MgO(001) substrates at a growth temperature of 350 °C. The saturation magnetic moment at 300 K for the epitaxial Mn₂VAl films is ∼1.2 μB/f.u., which is almost equivalent to the highest value for high-temperature-grown thin-film samples reported previously. Due to the low-temperature synthesis of L2₁-Mn₂VAl, an epitaxial all-Heusler L2₁-Mn₂VAl/L2₁-Fe₂VAl/L2₁-Mn₂VAl trilayer with sharp heterointerfaces is obtained. This study presents the possibility of all-Heusler current-perpendicular-to-plane giant magnetoresistive devices with high performance.

©2022. This manuscript version is made available under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

89443

Epitaxial Mn₂VAl films with L2₁-ordered structure for all-Heusler stacks

Elsevier B.V.

英語

2022-11-01

Journal of Magnetism and Magnetic Materials

561

169644

https://doi.org/10.1016/j.jmmm.2022.169644

https://hdl.handle.net/11094/89443