Formation of high-quality SiO₂/GaN interfaces with suppressed Ga-oxide interlayer via sputter deposition of SiO₂

Onishi, Kentaro; Kobayashi, Takuma; Mizobata, Hidetoshi; Nozaki, Mikito; Yoshigoe, Akitaka; Shimura, Takayoshi; Watanabe, Heiji

doi:https://doi.org/10.35848/1347-4065/acd1ca

Formation of high-quality SiO₂/GaN interfaces with suppressed Ga-oxide interlayer via sputter deposition of SiO₂

Onishi, Kentaro; Kobayashi, Takuma; Mizobata, Hidetoshi et al.

Japanese Journal of Applied Physics, 2023, 62(5), 050903

アクセス数:115件（2025-03-14 18:27 集計）

固定URL: https://hdl.handle.net/11094/91290

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タイトル	Formation of high-quality SiO₂/GaN interfaces with suppressed Ga-oxide interlayer via sputter deposition of SiO₂
著者	著者名 Onishi, Kentaro
	NRID 1000020827711 1000020827711 ORCID 0000-0002-2755-5079 0000-0002-2755-5079 researchmap permalink takumakobayashi takumakobayashi Scopus Author ID 57203742549 57203742549 著者名 Kobayashi, Takuma
	researchmap permalink 7000011979 7000011979 Scopus Author ID 57195445150 57195445150 著者名 Mizobata, Hidetoshi
	NRID 1000090646217 1000090646217 ORCID 0009-0008-2368-1036 0009-0008-2368-1036 researchmap permalink n0z n0z 著者名 Nozaki, Mikito
	NRID 1000000283490 1000000283490 著者名 Yoshigoe, Akitaka
	NRID 1000090252600 1000090252600 ORCID 0000-0002-8859-7010 0000-0002-8859-7010 researchmap permalink read0042803 read0042803 Scopus Author ID 35510328800 35510328800 著者名 Shimura, Takayoshi
	NRID 1000090379115 1000090379115 ORCID 0000-0002-7916-3093 0000-0002-7916-3093 researchmap permalink heijiw heijiw Scopus Author ID 7410305922 7410305922 著者名 Watanabe, Heiji
内容	This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/acd1ca.
抄録	While the formation of a GaOx interlayer is key to achieving SiO₂/GaN interfaces with low defect density, positive fixed charge is rather easily generated through the reduction of GaOx layer if the annealing conditions are not properly designed. In this study, we minimized the unstable GaOx layer by sputter SiO₂ deposition. Negligible GaOx growth was confirmed by synchrotron radiation X-ray photoelectron spectroscopy, even when post-deposition oxygen annealing up to 600℃ was performed. A MOS device with negligible capacitance–voltage hysteresis, stable flat-band voltage, and low leakage current was demonstrated by performing oxygen and forming gas annealing at temperatures of 600℃ and 400℃, respectively.
出版者	IOP Publishing
収録物名	Japanese Journal of Applied Physics
巻(号)	62(5)
ページ	050903
刊行年月	2023-05-16
言語	英語
ハンドルURL	https://hdl.handle.net/11094/91290
PISSN	00214922
eISSN	13474065
NCID	AA12295836
関連情報 (isVersionOf)	DOI (出版社版) https://doi.org/10.35848/1347-4065/acd1ca
アクセス権	open access
権利情報	This Accepted Manuscript is available for reuse under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License after the 12 month embargo period provided that all the terms of the licence are adhered to.
出版タイプ	Accepted Manuscript
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Japanese Journal of Applied Physics. 2023, 62(5), p. 050903
DC.title	Formation of high-quality SiO₂/GaN interfaces with suppressed Ga-oxide interlayer via sputter deposition of SiO₂
DC.creator	Onishi, Kentaro
	Kobayashi, Takuma
	Mizobata, Hidetoshi
	Nozaki, Mikito
	Yoshigoe, Akitaka
	Shimura, Takayoshi
	Watanabe, Heiji
DC.publisher	IOP Publishing
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2023-05-16
DC.identifier	https://doi.org/10.35848/1347-4065/acd1ca
DC.description	This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/acd1ca.
DCTERMS.abstract	While the formation of a GaOx interlayer is key to achieving SiO₂/GaN interfaces with low defect density, positive fixed charge is rather easily generated through the reduction of GaOx layer if the annealing conditions are not properly designed. In this study, we minimized the unstable GaOx layer by sputter SiO₂ deposition. Negligible GaOx growth was confirmed by synchrotron radiation X-ray photoelectron spectroscopy, even when post-deposition oxygen annealing up to 600℃ was performed. A MOS device with negligible capacitance–voltage hysteresis, stable flat-band voltage, and low leakage current was demonstrated by performing oxygen and forming gas annealing at temperatures of 600℃ and 400℃, respectively.
DC.rights	This Accepted Manuscript is available for reuse under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License after the 12 month embargo period provided that all the terms of the licence are adhered to.
DC.format	91290
citation_title	Formation of high-quality SiO₂/GaN interfaces with suppressed Ga-oxide interlayer via sputter deposition of SiO₂
citation_author	Onishi, Kentaro
	Kobayashi, Takuma
	Mizobata, Hidetoshi
	Nozaki, Mikito
	Yoshigoe, Akitaka
	Shimura, Takayoshi
	Watanabe, Heiji
citation_publisher	IOP Publishing
citation_language	英語
citation_date	2023-05-16
citation_journal_title	Japanese Journal of Applied Physics
citation_volume	62
citation_issue	5
citation_firstpage	050903
citation_doi	https://doi.org/10.35848/1347-4065/acd1ca
citation_public_url	https://hdl.handle.net/11094/91290

Formation of high-quality SiO₂/GaN interfaces with suppressed Ga-oxide interlayer via sputter deposition of SiO₂

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