学術雑誌論文

学術雑誌論文

text

Applied Physics Letters. 2023, 123(10), p. 102102

Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing

AIP Publishing

英語

text

2023-09-06

https://doi.org/10.1063/5.0166745

Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi; Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing. Appl. Phys. Lett. 4 September 2023; 123 (10): 102102. https://doi.org/10.1063/5.0166745

Color centers in solids can serve as single photon emitters (SPEs) those are important in many quantum applications. Silicon carbide (SiC) is a promising host for color centers because of its well-established crystal growth and device technologies. Although color centers with extremely high brightness were found at the silicon dioxide (SiO2)/SiC interface, controlling their density and optical properties remains a challenge. In this study, we demonstrate control over the color centers at the SiO2/SiC interface by designing the oxidation and annealing conditions. We report that post-oxidation CO2 annealing has the ability to reduce the color centers at the interface and form well-isolated SPEs with bright emission. We also discuss the correlation between the color centers and electrically active defects.

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 4 September 2023; 123 (10): 102102 and may be found at https://doi.org/10.1063/5.0166745.

92519

Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing

AIP Publishing

英語

2023-09-06

Applied Physics Letters

123

10

102102

https://doi.org/10.1063/5.0166745

https://hdl.handle.net/11094/92519