学術雑誌論文

学術雑誌論文

text

Applied Physics Express. 2023, 16(10), p. 105501

Passivation of hole traps in SiO₂/GaN metal-oxide-semiconductor devices by high-density magnesium doping

IOP Publishing

英語

text

2023-10-06

https://doi.org/10.35848/1882-0786/acfc95

This is the Accepted Manuscript version of an article accepted for publication in Applied Physics Express. IOP Publishing Ltd are not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1882-0786/acfc95.

A major challenge in GaN-based metal-oxide-semiconductor (MOS) devices is significant hole trapping near the oxide/GaN interface. In this study, we show that the density and energy level of the hole traps depends crucially on the concentration of magnesium (Mg) dopants in GaN layers. Although the surface potential of a conventional SiO₂/p-GaN MOS device is severely pinned by hole trapping, hole accumulation and very low interface state densities below 1011 cm−2 eV−1 are demonstrated for MOS capacitors on heavily Mg-doped GaN epilayers regardless of the degree of dopant activation. These findings indicate the decisive role of Mg atoms in defect passivation.

This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to.

92711

Passivation of hole traps in SiO₂/GaN metal-oxide-semiconductor devices by high-density magnesium doping

IOP Publishing

英語

2023-10-06

Applied Physics Express

16

10

105501

https://doi.org/10.35848/1882-0786/acfc95

https://hdl.handle.net/11094/92711