Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy

Murakami, Fumikazu; Takeo, Atsushi; Mitchell, Brandon; Dierolf, Volkmar; Fujiwara, Yasufumi; Tonouchi, Masayoshi

doi:https://doi.org/10.1038/s43246-023-00428-6

Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy

Murakami, Fumikazu; Takeo, Atsushi; Mitchell, Brandon et al.

Communications Materials, 2023, 4, 100

アクセス数:66件（2025-04-26 09:33 集計）

固定URL: https://hdl.handle.net/11094/93383

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タイトル	Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy
著者	著者名 Murakami, Fumikazu
	著者名 Takeo, Atsushi
	著者名 Mitchell, Brandon
	著者名 Dierolf, Volkmar
	NRID 1000010181421 1000010181421 researchmap permalink read0042513 read0042513 Scopus Author ID 7402562025 7402562025 著者名 Fujiwara, Yasufumi
	NRID 1000040207593 1000040207593 ORCID 0000-0002-9284-3501 0000-0002-9284-3501 researchmap permalink read0051752 read0051752 Scopus Author ID 7006497099 7006497099 著者名 Tonouchi, Masayoshi
内容	Murakami F., Takeo A., Mitchell B., et al. Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy. Communications Materials 4, 100 (2023); https://doi.org/10.1038/s43246-023-00428-6.
抄録	Eu-doped Gallium nitride (GaN) is a promising candidate for GaN-based red light-emitting diodes, which are needed for future micro-display technologies. Introducing a superlattice structure comprised of alternating undoped and Eu-doped GaN layers has been observed to lead to an order-of-magnitude increase in output power; however, the underlying mechanism remains unknown. Here, we explore the optical and electrical properties of these superlattice structures utilizing terahertz emission spectroscopy. We find that ~0.1% Eu doping reduces the bandgap of GaN by ~40 meV and increases the index of refraction by ~20%, which would result in potential barriers and carrier confinement within a superlattice structure. To confirm the presence of these potential barriers, we explored the temperature dependence of the terahertz emission, which was used to estimate the barrier potentials. The result revealed that even a dilutely doped superlattice structure induces significant confinement for carriers, enhancing carrier recombination within the Eu-doped regions. Such an enhancement would improve the external quantum efficiency in the Eu-doped devices. We argue that the benefits of the superlattice structure are not limited to Eu-doped GaN, which provides a roadmap for enhanced optoelectronic functionalities in all rare-earth-doped semiconductor systems.
出版者	Springer Nature
収録物名	Communications Materials
巻(号)	4
ページ	100
刊行年月	2023-12-01
言語	英語
ハンドルURL	https://hdl.handle.net/11094/93383
eISSN	26624443
関連情報 (isIdenticalTo)	DOI (出版社版) https://doi.org/10.1038/s43246-023-00428-6
アクセス権	open access
権利情報	This article is licensed under a Creative Commons Attribution 4.0 International License.
出版タイプ	Version of Record
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Communications Materials. 2023, 4, p. 100
DC.title	Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy
DC.creator	Murakami, Fumikazu
	Takeo, Atsushi
	Mitchell, Brandon
	Dierolf, Volkmar
	Fujiwara, Yasufumi
	Tonouchi, Masayoshi
DC.publisher	Springer Nature
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2023-12-01
DC.identifier	https://doi.org/10.1038/s43246-023-00428-6
DC.description	Murakami F., Takeo A., Mitchell B., et al. Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy. Communications Materials 4, 100 (2023); https://doi.org/10.1038/s43246-023-00428-6.
DCTERMS.abstract	Eu-doped Gallium nitride (GaN) is a promising candidate for GaN-based red light-emitting diodes, which are needed for future micro-display technologies. Introducing a superlattice structure comprised of alternating undoped and Eu-doped GaN layers has been observed to lead to an order-of-magnitude increase in output power; however, the underlying mechanism remains unknown. Here, we explore the optical and electrical properties of these superlattice structures utilizing terahertz emission spectroscopy. We find that ~0.1% Eu doping reduces the bandgap of GaN by ~40 meV and increases the index of refraction by ~20%, which would result in potential barriers and carrier confinement within a superlattice structure. To confirm the presence of these potential barriers, we explored the temperature dependence of the terahertz emission, which was used to estimate the barrier potentials. The result revealed that even a dilutely doped superlattice structure induces significant confinement for carriers, enhancing carrier recombination within the Eu-doped regions. Such an enhancement would improve the external quantum efficiency in the Eu-doped devices. We argue that the benefits of the superlattice structure are not limited to Eu-doped GaN, which provides a roadmap for enhanced optoelectronic functionalities in all rare-earth-doped semiconductor systems.
DC.rights	This article is licensed under a Creative Commons Attribution 4.0 International License.
DC.format	93383
citation_title	Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy
citation_author	Murakami, Fumikazu
	Takeo, Atsushi
	Mitchell, Brandon
	Dierolf, Volkmar
	Fujiwara, Yasufumi
	Tonouchi, Masayoshi
citation_publisher	Springer Nature
citation_language	英語
citation_date	2023-12-01
citation_journal_title	Communications Materials
citation_volume	4
citation_firstpage	100
citation_doi	https://doi.org/10.1038/s43246-023-00428-6
citation_public_url	https://hdl.handle.net/11094/93383

Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy

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