学術雑誌論文

学術雑誌論文

text

Applied Physics Express. 2024, 17(1), p. 016501

Elastic constants of GaN grown by the oxide vapor phase epitaxy method

Institute of Physics

英語

text

2024-01-01

https://doi.org/10.35848/1882-0786/ad0ba2

Fukuda H., Nagakubo A., Usami S., et al. Elastic constants of GaN grown by the oxide vapor phase epitaxy method. Applied Physics Express 17, 016501 (2024); https://doi.org/10.35848/1882-0786/ad0ba2.

Oxide vapor phase epitaxy (OVPE) has attracted much attention as a highly efficient method for synthesizing high-quality bulk GaN crystals, but the mechanical properties of OVPE GaN have not been clarified. We measured the five independent elastic constants of the OVPE GaN by resonant ultrasound spectroscopy. The in-plane Young modulus E 1 and shear modulus C 66 of the OVPE GaN are smaller than those of the hydride vapor phase epitaxy GaN by 1.8% and 1.3%, respectively. These reductions agree with predictions by density functional theory calculations. We also calculated the Debye temperature, revealing that oxygen impurity decreases its magnitude.

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93616

Elastic constants of GaN grown by the oxide vapor phase epitaxy method

Institute of Physics

英語

2024-01-01

Applied Physics Express

17

1

016501

https://doi.org/10.35848/1882-0786/ad0ba2

https://hdl.handle.net/11094/93616