Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate

Tatsumi, Hiroaki; Moon, Seongjae; Takahashi, Makoto; Kozawa, Takahiro; Tsushima, Eiki; Nishikawa, Hiroshi

doi:https://doi.org/10.1016/j.matdes.2024.112637

Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate

Tatsumi, Hiroaki; Moon, Seongjae; Takahashi, Makoto et al.

Materials and Design, 2024, 238, 112637

アクセス数:879件（2025-09-30 06:41 集計）

固定URL: https://hdl.handle.net/11094/94583

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タイトル	Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate
著者	NRID 1000000961757 1000000961757 ORCID 0000-0002-0561-3100 0000-0002-0561-3100 researchmap permalink hiroaki_tatsumi hiroaki_tatsumi Scopus Author ID 54914528200 54914528200 著者名 Tatsumi, Hiroaki
	著者名 Moon, Seongjae
	NRID 1000010294133 1000010294133 researchmap permalink AB_MTakahashi AB_MTakahashi Scopus Author ID 55701142600 55701142600 著者名 Takahashi, Makoto
	NRID 1000040734158 1000040734158 ORCID 0000-0002-8793-3369 0000-0002-8793-3369 researchmap permalink thkw thkw Scopus Author ID 56429926400 56429926400 著者名 Kozawa, Takahiro
	著者名 Tsushima, Eiki
	NRID 1000090346180 1000090346180 ORCID 0000-0002-4363-9520 0000-0002-4363-9520 researchmap permalink read0191232 read0191232 Scopus Author ID 57219209494 57219209494 著者名 Nishikawa, Hiroshi
キーワード等	Bonding interface
	Ceramic insulating circuit substrate
	Cu–Si3N4 bonding
	Silicon nitride
内容	Tatsumi H., Moon S., Takahashi M., et al. Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate. Materials and Design 238, 112637 (2024); https://doi.org/10.1016/j.matdes.2024.112637.
抄録	The advancement of power modules demands more reliable insulating circuit substrates. Traditional substrates, comprising Cu and Si3N4, are produced using active metal brazing (AMB). However, AMB substrates have reliability concerns owing to electrochemical migration and void formation from brazing filler metals. This study introduces a quasi-direct Cu–Si3N4 bonding technique using a Ti/Al bilayer active metal deposition at the bonding interface. A sputtered Ti/Al bilayer was formed on the Si3N4 surface, then heated and pressurized the sputtered Si3N4 substrate with Cu sheets in vacuum to bond each other without voids or delamination. The Ti/Al layers reacted with Si3N4 and Cu, forming a 300 nm intermediate layer. TEM observations show this layer contains segregated Ti–N and Cu–Al phases, with a good lattice match to Si3N4 and Cu–Al. Temperature-cycling tests on the Cu/Si3N4/Cu substrate revealed delamination caused by increased tensile stress at the periphery of the bonding area due to asymmetrical Cu patterns. This novel quasi-direct Cu–Si3N4 bonding technique addresses issues of electrochemical migration and void formation seen in AMB substrates, offering a reliable bonding interface for power electronic substrates.
出版者	Elsevier Ltd
収録物名	Materials and Design
巻(号)	238
ページ	112637
刊行年月	2024-02-01
言語	英語
ハンドルURL	https://hdl.handle.net/11094/94583
PISSN	02641275
eISSN	18734197
関連情報 (isIdenticalTo)	DOI (出版社版) https://doi.org/10.1016/j.matdes.2024.112637
アクセス権	open access
権利情報	This article is licensed under a Creative Commons Attribution 4.0 International License.
出版タイプ	Version of Record
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Materials and Design. 2024, 238, p. 112637
DC.title	Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate
DC.creator	Tatsumi, Hiroaki
	Moon, Seongjae
	Takahashi, Makoto
	Kozawa, Takahiro
	Tsushima, Eiki
	Nishikawa, Hiroshi
DC.publisher	Elsevier Ltd
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2024-02-01
DC.identifier	https://doi.org/10.1016/j.matdes.2024.112637
DC.subject	Bonding interface
	Ceramic insulating circuit substrate
	Cu–Si3N4 bonding
	Silicon nitride
DC.description	Tatsumi H., Moon S., Takahashi M., et al. Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate. Materials and Design 238, 112637 (2024); https://doi.org/10.1016/j.matdes.2024.112637.
DCTERMS.abstract	The advancement of power modules demands more reliable insulating circuit substrates. Traditional substrates, comprising Cu and Si3N4, are produced using active metal brazing (AMB). However, AMB substrates have reliability concerns owing to electrochemical migration and void formation from brazing filler metals. This study introduces a quasi-direct Cu–Si3N4 bonding technique using a Ti/Al bilayer active metal deposition at the bonding interface. A sputtered Ti/Al bilayer was formed on the Si3N4 surface, then heated and pressurized the sputtered Si3N4 substrate with Cu sheets in vacuum to bond each other without voids or delamination. The Ti/Al layers reacted with Si3N4 and Cu, forming a 300 nm intermediate layer. TEM observations show this layer contains segregated Ti–N and Cu–Al phases, with a good lattice match to Si3N4 and Cu–Al. Temperature-cycling tests on the Cu/Si3N4/Cu substrate revealed delamination caused by increased tensile stress at the periphery of the bonding area due to asymmetrical Cu patterns. This novel quasi-direct Cu–Si3N4 bonding technique addresses issues of electrochemical migration and void formation seen in AMB substrates, offering a reliable bonding interface for power electronic substrates.
DC.rights	This article is licensed under a Creative Commons Attribution 4.0 International License.
DC.format	94583
citation_title	Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate
citation_author	Tatsumi, Hiroaki
	Moon, Seongjae
	Takahashi, Makoto
	Kozawa, Takahiro
	Tsushima, Eiki
	Nishikawa, Hiroshi
citation_publisher	Elsevier Ltd
citation_language	英語
citation_date	2024-02-01
citation_journal_title	Materials and Design
citation_volume	238
citation_firstpage	112637
citation_doi	https://doi.org/10.1016/j.matdes.2024.112637
citation_public_url	https://hdl.handle.net/11094/94583

Quasi-direct Cu–Si3N4 bonding using multi-layered active metal deposition for power-module substrate

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