Study of Cu Micro-via by TOF-SIMS and STEM

Nishijima, Masahiko; Hsieh, Ming Chun; Zheng, Zhang; Suetake, Aiji; Yoshida, Hiroshi; Okumuara, Rieko; Chen, Chuantong; Homma, Hidekazu; Kita, Koji; Suganuma, Katsuaki

doi:https://doi.org/10.23919/ICEP58572.2023.10129689

Study of Cu Micro-via by TOF-SIMS and STEM

Nishijima, Masahiko; Hsieh, Ming Chun; Zheng, Zhang et al.

2023 International Conference on Electronics Packaging, 2023, 151-152

アクセス数:907件（2025-07-27 23:04 集計）

固定URL: https://hdl.handle.net/11094/94634

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タイトル	Study of Cu Micro-via by TOF-SIMS and STEM
著者	ORCID 0000-0002-5143-7558 0000-0002-5143-7558 researchmap permalink 7000005445 7000005445 Scopus Author ID 13608349900 13608349900 著者名 Nishijima, Masahiko
	著者名 Hsieh, Ming Chun
	著者名 Zheng, Zhang
	著者名 Suetake, Aiji
	著者名 Yoshida, Hiroshi
	著者名 Okumuara, Rieko
	NRID 1000050791703 1000050791703 ORCID 0000-0002-2365-4387 0000-0002-2365-4387 researchmap permalink chenchuantong chenchuantong Scopus Author ID 57189686286 57189686286 著者名 Chen, Chuantong
	著者名 Homma, Hidekazu
	著者名 Kita, Koji
	NRID 1000010154444 1000010154444 researchmap permalink ksuganuma ksuganuma 著者名 Suganuma, Katsuaki
キーワード等	Cu micro-via
	electroless Cu
	STEM
	TOF-SIMS
内容	Nishijima M., Hsieh M.C., Zheng Z., et al. Study of Cu Micro-via by TOF-SIMS and STEM. 2023 International Conference on Electronics Packaging, ICEP 2023 , 151 (2023); https://doi.org/10.23919/ICEP58572.2023.10129689.
抄録	The micro-via is a sandwiched structure with Cu electrolyte plating/electroless Cu plating/Cu electrolyte plating Pad, and the quality of the electroless Cu layer significantly affects the reliability of micro-via. In this work, we investigated the elemental ingredient of micro-vias which were prepared by a traditional electroless Cu plating method and a newly developed electroless Cu plating method by time of flight secondary ion mass spectrometry (TOF-SIMS) and scanning transmission electron microscopy (STEM). It is found that the concentration of hydrogen, oxygen and several elements exist in the electroless Cu layer prepared by traditional method compared to the new one. These can be a potential risk of nanovoids formation in the electroless Cu layer and decrease the reliability of HDI substrate.
会議情報	会議名 2023 International Conference on Electronics Packaging (ICEP) 回次 22 主催機関 Japan Institute of Electronics Packaging(JIEP) 開催期間 April 19th to April 22nd 2023 開催会場 Civic Auditorium Sears Home Yume Hall 開催地 Kumamoto 開催国日本
出版者	Institute of Electrical and Electronics Engineers Inc.
収録物名	2023 International Conference on Electronics Packaging
ページ	151-152
刊行年月	2023-05-23
言語	英語
ハンドルURL	https://hdl.handle.net/11094/94634
関連情報 (isVersionOf)	DOI (出版社版) https://doi.org/10.23919/ICEP58572.2023.10129689
関連情報 (isPartOf)	ISBN 9798350336726
アクセス権	open access
権利情報	© 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
出版タイプ	Accepted Manuscript
カテゴリ	会議発表論文 Conference Paper

資源タイプ	会議発表論文
ローカル資源タイプ	会議発表論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	2023 International Conference on Electronics Packaging. 2023, p. 151-152
DC.title	Study of Cu Micro-via by TOF-SIMS and STEM
DC.creator	Nishijima, Masahiko
	Hsieh, Ming Chun
	Zheng, Zhang
	Suetake, Aiji
	Yoshida, Hiroshi
	Okumuara, Rieko
	Chen, Chuantong
	Homma, Hidekazu
	Kita, Koji
	Suganuma, Katsuaki
DC.publisher	Institute of Electrical and Electronics Engineers Inc.
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2023-05-23
DC.identifier	https://doi.org/10.23919/ICEP58572.2023.10129689
DC.subject	Cu micro-via
	electroless Cu
	STEM
	TOF-SIMS
DC.description	Nishijima M., Hsieh M.C., Zheng Z., et al. Study of Cu Micro-via by TOF-SIMS and STEM. 2023 International Conference on Electronics Packaging, ICEP 2023 , 151 (2023); https://doi.org/10.23919/ICEP58572.2023.10129689.
DCTERMS.abstract	The micro-via is a sandwiched structure with Cu electrolyte plating/electroless Cu plating/Cu electrolyte plating Pad, and the quality of the electroless Cu layer significantly affects the reliability of micro-via. In this work, we investigated the elemental ingredient of micro-vias which were prepared by a traditional electroless Cu plating method and a newly developed electroless Cu plating method by time of flight secondary ion mass spectrometry (TOF-SIMS) and scanning transmission electron microscopy (STEM). It is found that the concentration of hydrogen, oxygen and several elements exist in the electroless Cu layer prepared by traditional method compared to the new one. These can be a potential risk of nanovoids formation in the electroless Cu layer and decrease the reliability of HDI substrate.
DC.rights	© 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
DC.format	94634
citation_title	Study of Cu Micro-via by TOF-SIMS and STEM
citation_author	Nishijima, Masahiko
	Hsieh, Ming Chun
	Zheng, Zhang
	Suetake, Aiji
	Yoshida, Hiroshi
	Okumuara, Rieko
	Chen, Chuantong
	Homma, Hidekazu
	Kita, Koji
	Suganuma, Katsuaki
citation_publisher	Institute of Electrical and Electronics Engineers Inc.
citation_language	英語
citation_date	2023-05-23
citation_journal_title	2023 International Conference on Electronics Packaging
citation_firstpage	151
citation_lastpage	152
citation_doi	https://doi.org/10.23919/ICEP58572.2023.10129689
citation_public_url	https://hdl.handle.net/11094/94634

Study of Cu Micro-via by TOF-SIMS and STEM

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