Spatial control of skyrmion stabilization energy by low-energy Ga⁺ ion implantation

Miki, S.; Hashimoto, K.; Cho, J.; Jung, J.; You, C. Y.; Ishikawa, R.; Tamura, E.; Nomura, H.; Goto, M.; Suzuki, Y.

doi:https://doi.org/10.1063/5.0153768

Spatial control of skyrmion stabilization energy by low-energy Ga⁺ ion implantation

Miki, S.; Hashimoto, K.; Cho, J. et al.

Applied Physics Letters, 2023, 122(20), 202401

アクセス数:2,157件（2026-07-17 08:10 集計）

固定URL: https://hdl.handle.net/11094/94756

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タイトル	Spatial control of skyrmion stabilization energy by low-energy Ga⁺ ion implantation
著者	ORCID 0000-0002-4641-5880 0000-0002-4641-5880 researchmap permalink soma_miki soma_miki Scopus Author ID 57218698337 57218698337 著者名 Miki, S.
	著者名 Hashimoto, K.
	著者名 Cho, J.
	著者名 Jung, J.
	著者名 You, C. Y.
	著者名 Ishikawa, R.
	著者名 Tamura, E.
	NRID 1000020506258 1000020506258 著者名 Nomura, H.
	NRID 1000080755679 1000080755679 著者名 Goto, M.
	NRID 1000050344437 1000050344437 ORCID 0000-0001-9423-8594 0000-0001-9423-8594 researchmap permalink read0081399 read0081399 Scopus Author ID 56154503600 56154503600 著者名 Suzuki, Y.
内容	Miki S., Hashimoto K., Cho J., et al. Applied Physics Letters. 122(20), 202401 (2023) https://doi.org/10.1063/5.0153768.
抄録	Magnetic skyrmions are candidates for information carriers in Brownian and stochastic computers. Developing a technique for fabricating a film with a suitable potential landscape, wherein the information carrier may diffuse freely, is essential for these probabilistic computers. In this study, to build the desired local potential into magnetic films, a 1.2 nm-thick Co-Fe-B film with a 5.2 nm-thick cap layer was irradiated by a focused ion beam (FIB) using Ga⁺ as the ion source under a low acceleration voltage of 5 keV. The fluences ranged from 0 to 25 × 1012 ions/cm2. Consequently, the critical temperature at which skyrmions appear or disappear is shifted by several 1-10 K depending on the ion fluence. The origin of this effect is discussed by observing the ion implantation profile and the surface sputtering depth using time-of-flight secondary ion mass spectrometry (TOF-SIMS) and atomic force microscopy (AFM). The results of TOF-SIMS measurements show that most of the Ga atoms exist in the Co-Fe-B layer. If all Ga atoms exist in the Co-Fe-B layer, the Ga concentration is 7 × 10−3 at. % after irradiation of 0.8 × 1012 ions/cm2. The AFM results show a sputtered pattern with 0.2 nm depth after irradiation of 16 × 1012 ions/cm2. Finally, the effect of irradiation on the diffusion coefficient was examined. It was determined that small fluences of 1.6 × 1012 and 0.8 × 1012 ions/cm2 can construct a potential barrier controlling skyrmions while maintaining diffusion coefficients as high as 10 μm2/s. The FIB process can be used to draw a circuit of probabilistic computers with skyrmions as information carriers.
出版者	American Institute of Physics Inc.
収録物名	Applied Physics Letters
巻(号)	122(20)
ページ	202401
刊行年月	2023-05-15
言語	英語
ハンドルURL	https://hdl.handle.net/11094/94756
PISSN	00036951
関連情報 (isIdenticalTo)	DOI (出版社版) https://doi.org/10.1063/5.0153768
アクセス権	open access
権利情報	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters. 15 May 2023; 122, 202401 and may be found at https://doi.org/10.1063/5.0153768.
出版タイプ	Version of Record
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	Applied Physics Letters. 2023, 122(20), p. 202401
DC.title	Spatial control of skyrmion stabilization energy by low-energy Ga⁺ ion implantation
DC.creator	Miki, S.
	Hashimoto, K.
	Cho, J.
	Jung, J.
	You, C. Y.
	Ishikawa, R.
	Tamura, E.
	Nomura, H.
	Goto, M.
	Suzuki, Y.
DC.publisher	American Institute of Physics Inc.
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2023-05-15
DC.identifier	https://doi.org/10.1063/5.0153768
DC.description	Miki S., Hashimoto K., Cho J., et al. Applied Physics Letters. 122(20), 202401 (2023) https://doi.org/10.1063/5.0153768.
DCTERMS.abstract	Magnetic skyrmions are candidates for information carriers in Brownian and stochastic computers. Developing a technique for fabricating a film with a suitable potential landscape, wherein the information carrier may diffuse freely, is essential for these probabilistic computers. In this study, to build the desired local potential into magnetic films, a 1.2 nm-thick Co-Fe-B film with a 5.2 nm-thick cap layer was irradiated by a focused ion beam (FIB) using Ga⁺ as the ion source under a low acceleration voltage of 5 keV. The fluences ranged from 0 to 25 × 1012 ions/cm2. Consequently, the critical temperature at which skyrmions appear or disappear is shifted by several 1-10 K depending on the ion fluence. The origin of this effect is discussed by observing the ion implantation profile and the surface sputtering depth using time-of-flight secondary ion mass spectrometry (TOF-SIMS) and atomic force microscopy (AFM). The results of TOF-SIMS measurements show that most of the Ga atoms exist in the Co-Fe-B layer. If all Ga atoms exist in the Co-Fe-B layer, the Ga concentration is 7 × 10−3 at. % after irradiation of 0.8 × 1012 ions/cm2. The AFM results show a sputtered pattern with 0.2 nm depth after irradiation of 16 × 1012 ions/cm2. Finally, the effect of irradiation on the diffusion coefficient was examined. It was determined that small fluences of 1.6 × 1012 and 0.8 × 1012 ions/cm2 can construct a potential barrier controlling skyrmions while maintaining diffusion coefficients as high as 10 μm2/s. The FIB process can be used to draw a circuit of probabilistic computers with skyrmions as information carriers.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters. 15 May 2023; 122, 202401 and may be found at https://doi.org/10.1063/5.0153768.
DC.format	94756
citation_title	Spatial control of skyrmion stabilization energy by low-energy Ga⁺ ion implantation
citation_author	Miki, S.
	Hashimoto, K.
	Cho, J.
	Jung, J.
	You, C. Y.
	Ishikawa, R.
	Tamura, E.
	Nomura, H.
	Goto, M.
	Suzuki, Y.
citation_publisher	American Institute of Physics Inc.
citation_language	英語
citation_date	2023-05-15
citation_journal_title	Applied Physics Letters
citation_volume	122
citation_issue	20
citation_firstpage	202401
citation_doi	https://doi.org/10.1063/5.0153768
citation_public_url	https://hdl.handle.net/11094/94756

Spatial control of skyrmion stabilization energy by low-energy Ga⁺ ion implantation

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