Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect

Ujimoto, Kakeru; Sameshima, Hiroki; Toyoki, Kentaro; Moriyama, Takahiro; Nakamura, Kohji; Kotani, Yoshinori; Suzuki, Motohiro; Iino, Ion; Kawamura, Naomi; Nakatani, Ryoichi; Shiratsuchi, Yu

doi:https://doi.org/10.1038/s41427-024-00541-z

Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect

Ujimoto, Kakeru; Sameshima, Hiroki; Toyoki, Kentaro et al.

NPG Asia Materials, 2024, 16, 20

アクセス数:818件（2025-07-26 22:08 集計）

固定URL: https://hdl.handle.net/11094/95663

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タイトル	Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect
著者	著者名 Ujimoto, Kakeru
	著者名 Sameshima, Hiroki
	NRID 1000090780007 1000090780007 ORCID 0000-0003-2887-0326 0000-0003-2887-0326 researchmap permalink k_toyoki k_toyoki Scopus Author ID 55970429100 55970429100 著者名 Toyoki, Kentaro
	NRID 1000050643326 1000050643326 著者名 Moriyama, Takahiro
	NRID 1000070281847 1000070281847 著者名 Nakamura, Kohji
	NRID 1000010596464 1000010596464 著者名 Kotani, Yoshinori
	NRID 1000060443553 1000060443553 著者名 Suzuki, Motohiro
	著者名 Iino, Ion
	NRID 1000040393318 1000040393318 著者名 Kawamura, Naomi
	NRID 1000060314374 1000060314374 researchmap permalink read0068619 read0068619 Scopus Author ID 7005234924 7005234924 著者名 Nakatani, Ryoichi
	NRID 1000070379121 1000070379121 ORCID 0000-0002-8938-4869 0000-0002-8938-4869 researchmap permalink read0090304 read0090304 Scopus Author ID 6602197167 6602197167 著者名 Shiratsuchi, Yu
内容	Ujimoto K., Sameshima H., Toyoki K., et al. Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect. NPG Asia Materials 16, 20 (2024); https://doi.org/10.1038/s41427-024-00541-z.
抄録	In this study, using the Pt/Cr2O3/Pt epitaxial trilayer, we demonstrate the giant voltage modulation of the antiferromagnetic spin reversal and the voltage-induced 180° switching of the Néel vector in maintaining a permanent magnetic field. We obtained a significant modulation efficiency of the switching field, Δμ0HSW/ΔV (Δμ0HSW/ΔE), reaching a maximum of −500 mT/V (−4.80 T nm/V); this value was more than 50 times greater than that of the ferromagnetic-based counterparts. From the temperature dependence of the modulation efficiency, X-ray magnetic circular dichroism measurements and first-principles calculations, we showed that the origin of the giant modulation efficiency relied on the electric field modulation of the net magnetization due to the magnetoelectric effect. From the first-principles calculation and the thickness effect on the offset electric field, we found that the interfacial magnetoelectric effect emerged. Our demonstration reveals the energy-efficient and widely applicable operation of an antiferromagnetic spin based on a mechanism distinct from magnetic anisotropy control.
出版者	Nature Research
収録物名	NPG Asia Materials
巻(号)	16
ページ	20
刊行年月	2024-04-05
言語	英語
ハンドルURL	https://hdl.handle.net/11094/95663
PISSN	18844049
eISSN	18844057
関連情報 (isIdenticalTo)	DOI (出版社版) https://doi.org/10.1038/s41427-024-00541-z
アクセス権	open access
権利情報	This article is licensed under a Creative Commons Attribution 4.0 International License.
出版タイプ	Version of Record
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
DCTERMS.bibliographicCitation	NPG Asia Materials. 2024, 16, p. 20
DC.title	Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect
DC.creator	Ujimoto, Kakeru
	Sameshima, Hiroki
	Toyoki, Kentaro
	Moriyama, Takahiro
	Nakamura, Kohji
	Kotani, Yoshinori
	Suzuki, Motohiro
	Iino, Ion
	Kawamura, Naomi
	Nakatani, Ryoichi
	Shiratsuchi, Yu
DC.publisher	Nature Research
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2024-04-05
DC.identifier	https://doi.org/10.1038/s41427-024-00541-z
DC.description	Ujimoto K., Sameshima H., Toyoki K., et al. Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect. NPG Asia Materials 16, 20 (2024); https://doi.org/10.1038/s41427-024-00541-z.
DCTERMS.abstract	In this study, using the Pt/Cr2O3/Pt epitaxial trilayer, we demonstrate the giant voltage modulation of the antiferromagnetic spin reversal and the voltage-induced 180° switching of the Néel vector in maintaining a permanent magnetic field. We obtained a significant modulation efficiency of the switching field, Δμ0HSW/ΔV (Δμ0HSW/ΔE), reaching a maximum of −500 mT/V (−4.80 T nm/V); this value was more than 50 times greater than that of the ferromagnetic-based counterparts. From the temperature dependence of the modulation efficiency, X-ray magnetic circular dichroism measurements and first-principles calculations, we showed that the origin of the giant modulation efficiency relied on the electric field modulation of the net magnetization due to the magnetoelectric effect. From the first-principles calculation and the thickness effect on the offset electric field, we found that the interfacial magnetoelectric effect emerged. Our demonstration reveals the energy-efficient and widely applicable operation of an antiferromagnetic spin based on a mechanism distinct from magnetic anisotropy control.
DC.rights	This article is licensed under a Creative Commons Attribution 4.0 International License.
DC.format	95663
citation_title	Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect
citation_author	Ujimoto, Kakeru
	Sameshima, Hiroki
	Toyoki, Kentaro
	Moriyama, Takahiro
	Nakamura, Kohji
	Kotani, Yoshinori
	Suzuki, Motohiro
	Iino, Ion
	Kawamura, Naomi
	Nakatani, Ryoichi
	Shiratsuchi, Yu
citation_publisher	Nature Research
citation_language	英語
citation_date	2024-04-05
citation_journal_title	NPG Asia Materials
citation_volume	16
citation_firstpage	20
citation_doi	https://doi.org/10.1038/s41427-024-00541-z
citation_public_url	https://hdl.handle.net/11094/95663

Giant gate modulation of antiferromagnetic spin reversal by the magnetoelectric effect

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