学術雑誌論文

学術雑誌論文

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2024, 549, p. 165276

Low-energy O⁺ or SiO⁺ ion beam induced deposition of silicon oxide using hexamethyldisiloxane

Elsevier B.V.

英語

2024-04-01

https://doi.org/10.1016/j.nimb.2024.165276

Yoshimura S., Takeuchi T., Kiuchi M.. Low-energy O⁺ or SiO⁺ ion beam induced deposition of silicon oxide using hexamethyldisiloxane. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 549, 165276 (2024); https://doi.org/10.1016/j.nimb.2024.165276.

We attempted to form silicon oxide films by spraying hexamethyldisiloxane (HMDSO) to a substrate together with low-energy O⁺ ion beam injections. The energy of O⁺ ions was 100 eV. The substrate temperature was set at room temperature. After the trial, we found a film deposited on the substrate. X-ray photoelectron spectroscopy (XPS) measurements of the film showed that the film was silicon dioxide. The XPS spectra of the film also showed that the film contained almost no carbon atoms. For comparison, 100 eV SiO⁺ ion beams were injected into a substrate at room temperature in conjunction with HMDSO. XPS results of the deposited film showed that the film was silicon oxide and the atomic concentration ratio of oxygen to silicon was 1.35. In this case, however, a relatively large amount of carbon atoms (12 atomic%) was included in the film. In conclusion, we confirmed that the 100 eV O⁺ ion beam induced deposition using HMDSO is useful for the silicon dioxide film formation.

96424

Low-energy O⁺ or SiO⁺ ion beam induced deposition of silicon oxide using hexamethyldisiloxane

Elsevier B.V.

英語

2024-04-01

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

549

165276

https://doi.org/10.1016/j.nimb.2024.165276

https://hdl.handle.net/11094/96424