学術雑誌論文

学術雑誌論文

Applied Physics Letters. 2024, 124, p. 231101

Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals

American Institute of Physics

英語

2024-06-03

https://doi.org/10.1063/5.0207339

Sano K., Fujikura H., Konno T., et al. Applied Physics Letters 124, 231101 (2024) https://doi.org/10.1063/5.0207339.

The external quantum efficiency (EQE) and internal quantum efficiency (IQE) of radiation are quantified by omnidirectional photoluminescence measurements using an integrating sphere for two types of GaN crystals with different carbon concentrations ([C] = 1 × 10 ¹⁴ cm ⁻³ , 2 × 10 ¹⁵ cm ⁻³ ). In the sample with lower [C], when the excitation density is 140 W cm ⁻² , the EQE and IQE for near-band-edge (NBE) emission are 0.787% and 21.7%, respectively. The relationship between [C] and the IQE for NBE emission indicates that carbon impurities work as effective nonradiative recombination centers (NRCs) in n-type GaN, and major NRCs switch from carbon impurities to intrinsic NRCs, such as vacancies, when [C] falls below 3.5 × 10 ¹⁴ cm ⁻³.

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Sano K., Fujikura H., Konno T., et al. Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals. Applied Physics Letters 124, 231101 (2024) and may be found at https://doi.org/10.1063/5.0207339.

97212

Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals

American Institute of Physics

英語

2024-06-03

Applied Physics Letters

124

231101

https://doi.org/10.1063/5.0207339

https://hdl.handle.net/11094/97212