Trigonal Fe₂Si Nanosheets at Fe/Amorphous SiOx Interfaces for Spintronic Nanodevices

Sato, Kazuhisa; Fujii, Yuta

doi:https://doi.org/10.1021/acsanm.4c02874

Trigonal Fe₂Si Nanosheets at Fe/Amorphous SiOx Interfaces for Spintronic Nanodevices 　

Sato, Kazuhisa; Fujii, Yuta

ACS Applied Nano Materials, 2024, 7(14), 16799-16805

アクセス数:429件（2025-08-14 16:34 集計）

固定URL: https://hdl.handle.net/11094/97367

閲覧可能ファイル

ファイル	フォーマット	利用条件	サイズ	閲覧回数	利用開始日	説明	information
ACSApplNanoMat_7_14_16799	pdf	なし	1.49 MB	5	2025.07.13

論文情報

ファイル出力 EndNote Basic出力 Mendeley出力

タイトル	Trigonal Fe₂Si Nanosheets at Fe/Amorphous SiOx Interfaces for Spintronic Nanodevices
著者	NRID 1000070314424 1000070314424 ORCID 0000-0001-9078-2541 0000-0001-9078-2541 researchmap permalink read0158304 read0158304 Scopus Author ID 55552977400 55552977400 著者名 Sato, Kazuhisa
著者	著者名 Fujii, Yuta
キーワード等	Auger decay
	electronic excitation
	Fe2Si
	nanosheets
	nonradiative transition
内容	Sato K., Fujii Y.. Trigonal Fe₂Si Nanosheets at Fe/Amorphous SiOx Interfaces for Spintronic Nanodevices. ACS Applied Nano Materials 7, (2024); https://doi.org/10.1021/acsanm.4c02874.
抄録	Trigonal Fe₂Si nanosheets, which are promising candidates for spintronic nanodevices, were synthesized at the Fe/amorphous (a-)SiOx thin film interface using electron irradiation. The formation of nanoscale silicide was confirmed at 90 K as well as at 298 K. Such a low-temperature synthesis of Fe₂Si can be attributed to the dissociation of a-SiOx induced by electronic excitation; Si-O bonds dissociate through Auger decay of core-holes generated by electronic excitation, and then, dissociated Si atoms form Fe-Si bonds. The amount of Fe₂Si formed at room temperature was greater than that at 90 K, suggesting that the atomic migration induced by electronic excitation involves a contribution of thermal energy. The amount of Fe₂Si nanosheets produced indicates that the Si-O bonds are more easily dissociated by electronic excitation in a-SiOx rather than in a-SiO₂. Formation of the Fe₂Si nanosheets found in this study differs from the formation of an equiatomic FeSi phase predicted by thermodynamic models assuming diffusion at a planar Fe/Si interface. We propose a versatile route to selectively form metal silicide nanosheets in an electron irradiated area at temperatures below room temperature.
出版者	American Chemical Society
収録物名	ACS Applied Nano Materials
巻(号)	7(14)
ページ	16799-16805
刊行年月	2024-07-13
言語	英語
ハンドルURL	https://hdl.handle.net/11094/97367
eISSN	25740970
関連情報 (isVersionOf)	DOI (出版社版) https://doi.org/10.1021/acsanm.4c02874
アクセス権	open access
権利情報	This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Nano Materials, © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsanm.4c02874.
出版タイプ	Accepted Manuscript
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCTERMS.bibliographicCitation	ACS Applied Nano Materials. 2024, 7(14), p. 16799-16805
DC.title	Trigonal Fe₂Si Nanosheets at Fe/Amorphous SiOx Interfaces for Spintronic Nanodevices
DC.creator	Sato, Kazuhisa
DC.creator	Fujii, Yuta
DC.publisher	American Chemical Society
DC.language' scheme='DCTERMS.RFC1766	英語
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2024-07-13
DC.identifier	https://doi.org/10.1021/acsanm.4c02874
DC.subject	Auger decay
	electronic excitation
	Fe2Si
	nanosheets
	nonradiative transition
DC.description	Sato K., Fujii Y.. Trigonal Fe₂Si Nanosheets at Fe/Amorphous SiOx Interfaces for Spintronic Nanodevices. ACS Applied Nano Materials 7, (2024); https://doi.org/10.1021/acsanm.4c02874.
DCTERMS.abstract	Trigonal Fe₂Si nanosheets, which are promising candidates for spintronic nanodevices, were synthesized at the Fe/amorphous (a-)SiOx thin film interface using electron irradiation. The formation of nanoscale silicide was confirmed at 90 K as well as at 298 K. Such a low-temperature synthesis of Fe₂Si can be attributed to the dissociation of a-SiOx induced by electronic excitation; Si-O bonds dissociate through Auger decay of core-holes generated by electronic excitation, and then, dissociated Si atoms form Fe-Si bonds. The amount of Fe₂Si formed at room temperature was greater than that at 90 K, suggesting that the atomic migration induced by electronic excitation involves a contribution of thermal energy. The amount of Fe₂Si nanosheets produced indicates that the Si-O bonds are more easily dissociated by electronic excitation in a-SiOx rather than in a-SiO₂. Formation of the Fe₂Si nanosheets found in this study differs from the formation of an equiatomic FeSi phase predicted by thermodynamic models assuming diffusion at a planar Fe/Si interface. We propose a versatile route to selectively form metal silicide nanosheets in an electron irradiated area at temperatures below room temperature.
DC.rights	This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Nano Materials, © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsanm.4c02874.
DC.format	97367
citation_title	Trigonal Fe₂Si Nanosheets at Fe/Amorphous SiOx Interfaces for Spintronic Nanodevices
citation_author	Sato, Kazuhisa
citation_author	Fujii, Yuta
citation_publisher	American Chemical Society
citation_language	英語
citation_date	2024-07-13
citation_journal_title	ACS Applied Nano Materials
citation_volume	7
citation_issue	14
citation_firstpage	16799
citation_lastpage	16805
citation_doi	https://doi.org/10.1021/acsanm.4c02874
citation_public_url	https://hdl.handle.net/11094/97367

Trigonal Fe₂Si Nanosheets at Fe/Amorphous SiOx Interfaces for Spintronic Nanodevices

閲覧可能ファイル

論文情報

論文詳細を表示

Trigonal Fe₂Si Nanosheets at Fe/Amorphous SiOx Interfaces for Spintronic Nanodevices 　