学術雑誌論文

学術雑誌論文

ACS Omega. 2020, 5(3), p. 1457-1462

Athermal Crystal Defect Dynamics in Si Revealed by Cryo-High-Voltage Electron Microscopy

American Chemical Societyservice

英語

2020-01-08

https://doi.org/10.1021/acsomega.9b03028

Sato K., Yasuda H.. Athermal Crystal Defect Dynamics in Si Revealed by Cryo-High-Voltage Electron Microscopy. ACS Omega 5, 1457 (2020); https://doi.org/10.1021/acsomega.9b03028.

Low-temperature crystal defect dynamics in Si has been studied by a newly developed cryo-high-voltage electron microscopy. The planar {113} defects of self-interstitial atoms were introduced at 94 K by 1 MeV electron irradiation with damage higher than 0.42 displacements per atom (dpa), unlike past findings. The defects once grew and then shrunk during the observation. We show that the nucleation and the dissociation dynamics of the {113} defects can be attributed to an athermal process, which is deduced from anomalously fast diffusion of self-interstitial atoms at a low temperature.

This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Omega, © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsomega.9b03028.

97374

Athermal Crystal Defect Dynamics in Si Revealed by Cryo-High-Voltage Electron Microscopy

American Chemical Societyservice

英語

2020-01-08

ACS Omega

5

3

1457

1462

https://doi.org/10.1021/acsomega.9b03028

https://hdl.handle.net/11094/97374