学術雑誌論文

学術雑誌論文

Japanese Journal of Applied Physics. 2017, 56(10), p. 100304

Maximum usable thickness revisited: Imaging dislocations in Si by modern high-voltage scanning transmission electron microscopy

The Japan Society of Applied Physics

英語

2017-10-01

https://doi.org/10.7567/JJAP.56.100304

This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd are not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.7567/JJAP.56.100304.

We have quantitatively evaluated the usable thickness of specimens in scanning transmission electron microscopy (STEM) at 1MV using a wedgeshaped Si(110) single crystal including artificially introduced high-density dislocations. The width of dislocation images was employed as a criterion for the quantitative evaluation of usable thickness. Superior usable thickness in STEM than in TEM was found; the obtained results were 14.7μm for STEM and 5.8μm for TEM. In particular, in STEM, dislocations can be observed as thin lines with 10-15nm width in the thickness range up to 10 μm. The latest high-voltage STEM is useful for imaging crystal defects in thick semiconductors.

© 2017 The Japan Society of Applied Physics. This Accepted Manuscript is available for reuse under a CC BY-NC-ND licence after the 12 month embargo period provided that all the terms of the licence are adhered to.

97376

Maximum usable thickness revisited: Imaging dislocations in Si by modern high-voltage scanning transmission electron microscopy

The Japan Society of Applied Physics

英語

2017-10-01

Japanese Journal of Applied Physics

56

10

100304

https://doi.org/10.7567/JJAP.56.100304

https://hdl.handle.net/11094/97376