Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na-Flux Method and Enlargement of the Substrate Surpassing 6 Inches

Imanishi, Masayuki; Usami, Shigeyoshi; Murakami, Kosuke; Okumura, Kanako; Nakamura, Kosuke; Kakinouchi, Keisuke; Otoki, Yohei; Yamashita, Tomio; Tsurumi, Naohiro; Tamura, Satoshi; Ohno, Hiroshi; Okayama, Yoshio; Fujimori, Taku; Nagai, Seiji; Moriyama, Miki; Mori, Yusuke

doi:https://doi.org/10.1002/pssr.202400106

Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na-Flux Method and Enlargement of the Substrate Surpassing 6 Inches

Imanishi, Masayuki; Usami, Shigeyoshi; Murakami, Kosuke et al.

Physica Status Solidi - Rapid Research Letters, 2024, 18(11), 2400106

アクセス数:1,604件（2025-07-16 12:36 集計）

固定URL: https://hdl.handle.net/11094/97615

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タイトル	Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na-Flux Method and Enlargement of the Substrate Surpassing 6 Inches
著者	NRID 1000000795487 1000000795487 researchmap permalink Na-flux Na-flux Scopus Author ID 55361211900 55361211900 ORCID 0000-0001-9395-1750 0000-0001-9395-1750 著者名 Imanishi, Masayuki
	NRID 1000030897947 1000030897947 researchmap permalink s_usami s_usami Scopus Author ID 56770778200 56770778200 ORCID 0000-0002-9710-1718 0000-0002-9710-1718 著者名 Usami, Shigeyoshi
	著者名 Murakami, Kosuke
	著者名 Okumura, Kanako
	著者名 Nakamura, Kosuke
	著者名 Kakinouchi, Keisuke
	著者名 Otoki, Yohei
	著者名 Yamashita, Tomio
	著者名 Tsurumi, Naohiro
	著者名 Tamura, Satoshi
	著者名 Ohno, Hiroshi
	著者名 Okayama, Yoshio
	著者名 Fujimori, Taku
	著者名 Nagai, Seiji
	著者名 Moriyama, Miki
	NRID 1000090252618 1000090252618 ORCID 0000-0003-2952-7458 0000-0003-2952-7458 researchmap permalink mori_yusuke mori_yusuke Scopus Author ID 7404197134 7404197134 著者名 Mori, Yusuke
キーワード等	6 inch
	GaN
	hydride vapor phase epitaxy
	Na flux
	on-resistance
	p–n junction diode
	vertical transistor
内容	Imanishi M., Usami S., Murakami K., et al. Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na-Flux Method and Enlargement of the Substrate Surpassing 6 Inches. Physica Status Solidi - Rapid Research Letters, (2024); https://doi.org/10.1002/pssr.202400106.
抄録	The Na-flux method is expected to be a key GaN growth technique for obtaining ideal bulk GaN crystals. Herein, the structural quality of the latest GaN crystals grown using the Na-flux method and, for the first time, the characteristics of a vertical transistor fabricated on a GaN substrate grown using this method are discussed. Vertical transistors exhibit normally off operation with a gate voltage threshold exceeding 2 V and a maximum drain current of 3.3 A during the on-state operation. Additionally, it demonstrates a breakdown voltage exceeding 600 V and a low leakage current during off-state operation. It is also described that the variation in the on-resistance can be minimized using GaN substrates with minimal off-angle variations. This is crucial for achieving the large-current chips required for future demonstration of actual devices. In addition, the reverse I–V characteristics of the parasitic p–n junction diode (PND) structures indicate a reduction in the number of devices with a significant leakage current compared to commercially available GaN substrates. Finally, a circular GaN substrate with a diameter of 161 mm, surpassing 6 inches, grown using the Na-flux method is demonstrated, making it the largest GaN substrate aside from those produced through the tiling technique.
出版者	John Wiley and Sons Inc
収録物名	Physica Status Solidi - Rapid Research Letters
巻(号)	18(11)
ページ	2400106
刊行年月	2024-06-26
言語	英語
ハンドルURL	https://hdl.handle.net/11094/97615
PISSN	18626254
eISSN	18626270
関連情報 (isIdenticalTo)	DOI (出版社版) https://doi.org/10.1002/pssr.202400106
アクセス権	open access
権利情報	This article is licensed under a Creative Commons Attribution 4.0 International License.
出版タイプ	Version of Record
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCTERMS.bibliographicCitation	Physica Status Solidi - Rapid Research Letters. 2024, 18(11), p. 2400106
DC.title	Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na-Flux Method and Enlargement of the Substrate Surpassing 6 Inches
DC.creator	Imanishi, Masayuki
	Usami, Shigeyoshi
	Murakami, Kosuke
	Okumura, Kanako
	Nakamura, Kosuke
	Kakinouchi, Keisuke
	Otoki, Yohei
	Yamashita, Tomio
	Tsurumi, Naohiro
	Tamura, Satoshi
	Ohno, Hiroshi
	Okayama, Yoshio
	Fujimori, Taku
	Nagai, Seiji
	Moriyama, Miki
	Mori, Yusuke
DC.publisher	John Wiley and Sons Inc
DC.language' scheme='DCTERMS.RFC1766	英語
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2024-06-26
DC.identifier	https://doi.org/10.1002/pssr.202400106
DC.subject	6 inch
	GaN
	hydride vapor phase epitaxy
	Na flux
	on-resistance
	p–n junction diode
	vertical transistor
DC.description	Imanishi M., Usami S., Murakami K., et al. Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na-Flux Method and Enlargement of the Substrate Surpassing 6 Inches. Physica Status Solidi - Rapid Research Letters, (2024); https://doi.org/10.1002/pssr.202400106.
DCTERMS.abstract	The Na-flux method is expected to be a key GaN growth technique for obtaining ideal bulk GaN crystals. Herein, the structural quality of the latest GaN crystals grown using the Na-flux method and, for the first time, the characteristics of a vertical transistor fabricated on a GaN substrate grown using this method are discussed. Vertical transistors exhibit normally off operation with a gate voltage threshold exceeding 2 V and a maximum drain current of 3.3 A during the on-state operation. Additionally, it demonstrates a breakdown voltage exceeding 600 V and a low leakage current during off-state operation. It is also described that the variation in the on-resistance can be minimized using GaN substrates with minimal off-angle variations. This is crucial for achieving the large-current chips required for future demonstration of actual devices. In addition, the reverse I–V characteristics of the parasitic p–n junction diode (PND) structures indicate a reduction in the number of devices with a significant leakage current compared to commercially available GaN substrates. Finally, a circular GaN substrate with a diameter of 161 mm, surpassing 6 inches, grown using the Na-flux method is demonstrated, making it the largest GaN substrate aside from those produced through the tiling technique.
DC.rights	This article is licensed under a Creative Commons Attribution 4.0 International License.
DC.format	97615
citation_title	Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na-Flux Method and Enlargement of the Substrate Surpassing 6 Inches
citation_author	Imanishi, Masayuki
	Usami, Shigeyoshi
	Murakami, Kosuke
	Okumura, Kanako
	Nakamura, Kosuke
	Kakinouchi, Keisuke
	Otoki, Yohei
	Yamashita, Tomio
	Tsurumi, Naohiro
	Tamura, Satoshi
	Ohno, Hiroshi
	Okayama, Yoshio
	Fujimori, Taku
	Nagai, Seiji
	Moriyama, Miki
	Mori, Yusuke
citation_publisher	John Wiley and Sons Inc
citation_language	英語
citation_date	2024-06-26
citation_journal_title	Physica Status Solidi - Rapid Research Letters
citation_volume	18
citation_issue	11
citation_firstpage	2400106
citation_doi	https://doi.org/10.1002/pssr.202400106
citation_public_url	https://hdl.handle.net/11094/97615

Characteristics of Vertical Transistors on a GaN Substrate Fabricated via Na-Flux Method and Enlargement of the Substrate Surpassing 6 Inches

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