Metalorganic Vapor-Phase Epitaxy of +c/−c GaN Polarity Inverted Bilayer for Transverse Quasi-Phase-Matched Wavelength Conversion Device

Ikeda, Kazuhisa; Malik, Shahzeb; Uemukai, Masahiro et al.

Physica Status Solidi (B) Basic Research, 2024, 261(11), 2400161

アクセス数:630件（2025-11-01 10:07 集計）

固定URL: https://hdl.handle.net/11094/98298

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タイトル
Metalorganic Vapor-Phase Epitaxy of +c/−c GaN Polarity Inverted Bilayer for Transverse Quasi-Phase-Matched Wavelength Conversion Device
著者
著者名
Ikeda, Kazuhisa
著者名
Malik, Shahzeb
NRID
1000080362672 1000080362672
researchmap permalink
read0191222 read0191222
Scopus Author ID
6701849400 6701849400
著者名
Uemukai, Masahiro
NRID
1000090633537 1000090633537
ORCID
0000-0003-0148-9701 0000-0003-0148-9701
researchmap permalink
T-Tanikawa T-Tanikawa
Scopus Author ID
25823529800 25823529800
著者名
Tanikawa, Tomoyuki
NRID
1000040343115 1000040343115
ORCID
0000-0002-7897-3393 0000-0002-7897-3393
researchmap permalink
katayamaryuji katayamaryuji
Scopus Author ID
7004395093 7004395093
著者名
Katayama, Ryuji
キーワード等
GaN
metalorganic vapor-phase epitaxy
photon pair generation
polarity
内容
Ikeda K., Malik S., Uemukai M., et al. Metalorganic Vapor-Phase Epitaxy of +c/−c GaN Polarity Inverted Bilayer for Transverse Quasi-Phase-Matched Wavelength Conversion Device. Physica Status Solidi (B) Basic Research, (2024); https://doi.org/10.1002/pssb.202400161.
抄録
Photon-pair generation based on optical parametric down-conversion has attracted for the application as a light source for quantum information. Highly efficient wavelength-conversion devices require a polarity-inversion structure when using nitride semiconductors. A transverse quasi-phase-matching (QPM) polarity-inverted GaN bilayer channel waveguide device is suitable for efficient wavelength conversion. This study designed a cross-section device to satisfy the modal dispersion phase-matching condition between the TM₀₂ mode pump light and the TM₀₀ mode signal/idler light. Moreover, an AlN oxidation interlayer fabricates the Ga-polar/N-polar (+c/−c) GaN layers via metalorganic vapor-phase epitaxy (MOVPE). A 145 nm thick film layer with a macro-step-free surface is grown by optimizing the −c-GaN growth conditions and reducing the substrate off-angle to 0.2°. Next, the AlN layer is oxidized in an electric furnace and MOVPE is used to regrow a 1500 nm thick +c-GaN layer. A macrosteps-free surface can be achieved by reducing the off-angle to 0.2° and optimizing the −c-GaN growth conditions to avoid hillock formation. These results pave the way for improving the efficiency of GaN transverse QPM wavelength-conversion devices.
出版者
John Wiley and Sons Inc
収録物名
Physica Status Solidi (B) Basic Research
巻(号)
261(11)
ページ
2400161
刊行年月
2024-09-09
言語
英語
ハンドルURL
https://hdl.handle.net/11094/98298
PISSN
03701972
eISSN
15213951
関連情報 (isIdenticalTo)
DOI (出版社版)
https://doi.org/10.1002/pssb.202400161
アクセス権
open access
権利情報
This article is licensed under a Creative Commons Attribution 4.0 International License.
出版タイプ
Version of Record
カテゴリ
学術雑誌論文 Journal Article