Growth of all-epitaxial Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si

Yamada, Atsuya; Yamada, Michihiro; Kusumoto, Shuhei; do Nascimento, Julio A.; Murrill, Connor; Yamada, Shinya; Sawano, Kentarou; Lazarov, Vlado K.; Hamaya, Kohei

doi:https://doi.org/10.1016/j.mssp.2024.108140

Growth of all-epitaxial Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si　　

Yamada, Atsuya; Yamada, Michihiro; Kusumoto, Shuhei et al.

Materials Science in Semiconductor Processing, 2024, 173, 108140

アクセス数:1,112件（2025-07-28 11:37 集計）

固定URL: https://hdl.handle.net/11094/98510

閲覧可能ファイル

ファイル	フォーマット	利用条件	サイズ	閲覧回数	利用開始日	説明	information
MaterSciSemicondProcess_173_108140	pdf	なし	1.26 MB		2026.04.01

Creative Commons : 表示 - 非営利 - 改変禁止

論文情報

ファイル出力 EndNote Basic出力 Mendeley出力

タイトル	Growth of all-epitaxial Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si
著者	著者名 Yamada, Atsuya
	NRID 1000050778529 1000050778529 ORCID 0000-0002-9623-9926 0000-0002-9623-9926 researchmap permalink YamadaMichihiro YamadaMichihiro Scopus Author ID 57212378385 57212378385 著者名 Yamada, Michihiro
	著者名 Kusumoto, Shuhei
	著者名 do Nascimento, Julio A.
	著者名 Murrill, Connor
	NRID 1000030725049 1000030725049 ORCID 0000-0001-6340-9151 0000-0001-6340-9151 researchmap permalink shinyayamada shinyayamada Scopus Author ID 56140528400 56140528400 著者名 Yamada, Shinya
	NRID 1000090409376 1000090409376 著者名 Sawano, Kentarou
	著者名 Lazarov, Vlado K.
	NRID 1000090401281 1000090401281 ORCID 0000-0002-5473-6086 0000-0002-5473-6086 researchmap permalink read0102192 read0102192 Scopus Author ID 9244846800 9244846800 著者名 Hamaya, Kohei
キーワード等	Co₂MnSi
	Ge
	Spintronics
	Vertical spin-valve device
内容	Yamada A., Yamada M., Kusumoto S., et al. Growth of all-epitaxial Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si. Materials Science in Semiconductor Processing 173, 108140 (2024); https://doi.org/10.1016/j.mssp.2024.108140.
抄録	We explore epitaxial growth of Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si, where the Co₂MnSi (CMS) is expected to be a half-metallic material for spintronics. By combining solid phase epitaxy, low-temperature molecular beam epitaxy, and atomic layer termination techniques, we can grow an epitaxial Ge layer on CMS at 250 °C, where the atomic interdiffusion between Ge and CMS is suppressed. After further optimization of the growth condition of the Ge intermediate layer, all-epitaxial CMS/Ge/CMS vertically stacked structures with spin-valve like magnetization reversal processes are demonstrated. This vertically stacked structures can be utilized for vertical spin-valve devices with a Ge channel on Si.
出版者	Elsevier Ltd
収録物名	Materials Science in Semiconductor Processing
巻(号)	173
ページ	108140
刊行年月	2024-04-01
言語	英語
ハンドルURL	https://hdl.handle.net/11094/98510
PISSN	13698001
関連情報 (isVersionOf)	DOI (出版社版) https://doi.org/10.1016/j.mssp.2024.108140
アクセス権	embargoed access
権利情報	© 2024. This manuscript version is made available under the CC-BY-NC-ND 4.0 license https://creativecommons.org/licenses/by-nc-nd/4.0/
権利情報	The full-text file will be made open to the public on 1 April 2026 in accordance with the publisher's policy.
出版タイプ	Accepted Manuscript
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCTERMS.bibliographicCitation	Materials Science in Semiconductor Processing. 2024, 173, p. 108140
DC.title	Growth of all-epitaxial Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si
DC.creator	Yamada, Atsuya
	Yamada, Michihiro
	Kusumoto, Shuhei
	do Nascimento, Julio A.
	Murrill, Connor
	Yamada, Shinya
	Sawano, Kentarou
	Lazarov, Vlado K.
	Hamaya, Kohei
DC.publisher	Elsevier Ltd
DC.language' scheme='DCTERMS.RFC1766	英語
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2024-04-01
DC.identifier	https://doi.org/10.1016/j.mssp.2024.108140
DC.subject	Co₂MnSi
	Ge
	Spintronics
	Vertical spin-valve device
DC.description	Yamada A., Yamada M., Kusumoto S., et al. Growth of all-epitaxial Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si. Materials Science in Semiconductor Processing 173, 108140 (2024); https://doi.org/10.1016/j.mssp.2024.108140.
DCTERMS.abstract	We explore epitaxial growth of Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si, where the Co₂MnSi (CMS) is expected to be a half-metallic material for spintronics. By combining solid phase epitaxy, low-temperature molecular beam epitaxy, and atomic layer termination techniques, we can grow an epitaxial Ge layer on CMS at 250 °C, where the atomic interdiffusion between Ge and CMS is suppressed. After further optimization of the growth condition of the Ge intermediate layer, all-epitaxial CMS/Ge/CMS vertically stacked structures with spin-valve like magnetization reversal processes are demonstrated. This vertically stacked structures can be utilized for vertical spin-valve devices with a Ge channel on Si.
DC.rights	© 2024. This manuscript version is made available under the CC-BY-NC-ND 4.0 license https://creativecommons.org/licenses/by-nc-nd/4.0/
DC.rights	The full-text file will be made open to the public on 1 April 2026 in accordance with the publisher's policy.
DC.format	98510
citation_title	Growth of all-epitaxial Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si
citation_author	Yamada, Atsuya
	Yamada, Michihiro
	Kusumoto, Shuhei
	do Nascimento, Julio A.
	Murrill, Connor
	Yamada, Shinya
	Sawano, Kentarou
	Lazarov, Vlado K.
	Hamaya, Kohei
citation_publisher	Elsevier Ltd
citation_language	英語
citation_date	2024-04-01
citation_journal_title	Materials Science in Semiconductor Processing
citation_volume	173
citation_firstpage	108140
citation_doi	https://doi.org/10.1016/j.mssp.2024.108140
citation_public_url	https://hdl.handle.net/11094/98510

Growth of all-epitaxial Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si

閲覧可能ファイル

論文情報

論文詳細を表示

Growth of all-epitaxial Co₂MnSi/Ge/Co₂MnSi vertical spin-valve structures on Si　　