Formation of high-quality SiO₂/β-Ga₂O₃(001) MOS structures: The role of post-deposition annealing

Kobayashi, Takuma; Maeda, Kensei; Hara, Masahiro et al.

Applied Physics Letters, 2025, 126(1), 012108

アクセス数:947件（2025-12-01 05:39 集計）

固定URL: https://hdl.handle.net/11094/99315

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タイトル
Formation of high-quality SiO₂/β-Ga₂O₃(001) MOS structures: The role of post-deposition annealing
著者
NRID
1000020827711 1000020827711
ORCID
0000-0002-2755-5079 0000-0002-2755-5079
researchmap permalink
takumakobayashi takumakobayashi
Scopus Author ID
57203742549 57203742549
著者名
Kobayashi, Takuma
著者名
Maeda, Kensei
researchmap permalink
masahirohara masahirohara
ORCID
0000-0001-9748-8011 0000-0001-9748-8011
NRID
1000031004418 1000031004418
Scopus Author ID
7403348802 7403348802
著者名
Hara, Masahiro
NRID
1000090646217 1000090646217
ORCID
0009-0008-2368-1036 0009-0008-2368-1036
researchmap permalink
n0z n0z
著者名
Nozaki, Mikito
NRID
1000090379115 1000090379115
ORCID
0000-0002-7916-3093 0000-0002-7916-3093
researchmap permalink
heijiw heijiw
Scopus Author ID
7410305922 7410305922
著者名
Watanabe, Heiji
内容
Kobayashi Takuma et al., Appl. Phys. Lett. 126, 012108 (2025) https://doi.org/10.1063/5.0245289.
抄録
We investigated the effect of post-deposition annealing on the electrical characteristics of SiO₂/β-Ga₂O₃(001) MOS structures. While oxygen annealing effectively improves the interface properties, it induces acceptor defects in Ga₂O₃, leading to a decrease in net donor density. With the combination of oxygen and nitrogen annealing, carrier compensation was suppressed, and a low interface state density of about 1 × 10¹¹ cm⁻² eV⁻¹ was obtained near the conduction band edge of Ga₂O₃. High immunity against positive gate bias stress was also confirmed.
出版者
AIP Publishing
収録物名
Applied Physics Letters
巻(号)
126(1)
ページ
012108
刊行年月
2025-01-06
言語
英語
ハンドルURL
https://hdl.handle.net/11094/99315
PISSN
00036951
eISSN
10773118
関連情報 (isVersionOf)
DOI (出版社版)
https://doi.org/10.1063/5.0245289
アクセス権
open access
権利情報
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 6 January 2025; 126 (1): 012108 and may be found at https://doi.org/10.1063/5.0245289.
出版タイプ
Accepted Manuscript
カテゴリ
学術雑誌論文 Journal Article