CMOS voltage reference based on gate work function differences in poly-Si controlled by conductivity type and impurity concentration

Watanabe, Hirobumi; Ando, Shunsuke; Aota, Hideyuki; Dainin, Masanori; Chun, Yong-Jin; Taniguchi, Kenji

doi:https://doi.org/10.1109/jssc.2003.811974

CMOS voltage reference based on gate work function differences in poly-Si controlled by conductivity type and impurity concentration

Watanabe, Hirobumi; Ando, Shunsuke; Aota, Hideyuki et al.

IEEE Journal of Solid-State Circuits, 2003, 38(6), 987-994

アクセス数:454件（2025-07-17 13:37 集計）

固定URL: https://hdl.handle.net/11094/2899

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タイトル	CMOS voltage reference based on gate work function differences in poly-Si controlled by conductivity type and impurity concentration
著者	著者名 Watanabe, Hirobumi
	著者名 Ando, Shunsuke
	著者名 Aota, Hideyuki
	著者名 Dainin, Masanori
	著者名 Chun, Yong-Jin
	NRID 1000020192180 1000020192180 著者名 Taniguchi, Kenji
出版者	IEEE
収録物名	IEEE Journal of Solid-State Circuits
巻(号)	38(6)
ページ	987-994
刊行年月	2003-06
言語	英語
ハンドルURL	https://hdl.handle.net/11094/2899
PISSN	00189200
関連情報 (isIdenticalTo)	DOI (出版社版) https://doi.org/10.1109/jssc.2003.811974
アクセス権	open access
権利情報	©2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE..
出版タイプ	Version of Record
カテゴリ	学術雑誌論文 Journal Article

資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
DCMI資源タイプ	text
作成日	2003-06
DCTERMS.bibliographicCitation	IEEE Journal of Solid-State Circuits. 2003, 38(6), p. 987-994
DC.title	CMOS voltage reference based on gate work function differences in poly-Si controlled by conductivity type and impurity concentration
DC.creator	Watanabe, Hirobumi
	Ando, Shunsuke
	Aota, Hideyuki
	Dainin, Masanori
	Chun, Yong-Jin
	Taniguchi, Kenji
DC.publisher	IEEE
DC.language' scheme='DCTERMS.RFC1766	英語
DC.type' scheme='DCTERMS.DCMIType	text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2003-06
DC.identifier	https://doi.org/10.1109/jssc.2003.811974
DC.rights	©2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE..
DC.format	2899
citation_title	CMOS voltage reference based on gate work function differences in poly-Si controlled by conductivity type and impurity concentration
citation_author	Watanabe, Hirobumi
	Ando, Shunsuke
	Aota, Hideyuki
	Dainin, Masanori
	Chun, Yong-Jin
	Taniguchi, Kenji
citation_publisher	IEEE
citation_language	英語
citation_date	2003-06
citation_journal_title	IEEE Journal of Solid-State Circuits
citation_volume	38
citation_issue	6
citation_firstpage	987
citation_lastpage	994
citation_doi	https://doi.org/10.1109/jssc.2003.811974
citation_public_url	https://hdl.handle.net/11094/2899

CMOS voltage reference based on gate work function differences in poly-Si controlled by conductivity type and impurity concentration

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