CMOS voltage reference based on gate work function differences in poly-Si controlled by conductivity type and impurity concentration

Watanabe, Hirobumi; Ando, Shunsuke; Aota, Hideyuki; Dainin, Masanori; Chun, Yong-Jin; Taniguchi, Kenji

このアイテムのアクセス数:100件（2021-01-22 18:37 集計）

このアイテムへのリンクには次のURLをご利用ください:http://hdl.handle.net/11094/2899

閲覧可能ファイル

ファイル	フォーマット	サイズ	閲覧回数	説明
01202001	pdf	492 KB	920

論文情報

タイトル	CMOS voltage reference based on gate work function differences in poly-Si controlled by conductivity type and impurity concentration
著者	Watanabe, Hirobumi Watanabe, Hirobumi
	Ando, Shunsuke Ando, Shunsuke
	Aota, Hideyuki Aota, Hideyuki
	Dainin, Masanori Dainin, Masanori
	Chun, Yong-Jin Chun, Yong-Jin
	Taniguchi, Kenji Taniguchi, Kenji
著者の別表記	谷口, 研二
著者 (ヨミ)	タニグチ, ケンジ
公開者	IEEE
掲載誌名	IEEE Journal of Solid-State Circuits
巻	38
号	6
開始ページ	987
終了ページ	994
刊行年月	2003-06
ISSN	00189200
URL	http://hdl.handle.net/11094/2899
権利情報	©2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE..
言語	英語
カテゴリ	学術雑誌論文 Journal Article

著者版フラグ	publisher
NII資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
dcmi資源タイプ	text
日付	2003-06
DCTERMS.bibliographicCitation	IEEE Journal of Solid-State Circuits.38(6) P.987-P.994
DC.title	CMOS voltage reference based on gate work function differences in poly-Si controlled by conductivity type and impurity concentration
DC.creator	Watanabe, Hirobumi
	Ando, Shunsuke
	Aota, Hideyuki
	Dainin, Masanori
	Chun, Yong-Jin
	Taniguchi, Kenji
DC.creator	谷口, 研二
DC.publisher	IEEE
DC.language" scheme="DCTERMS.RFC1766	英語
DCTERMS.issued" scheme="DCTERMS.W3CDTF	2003-06
DC.identifier" scheme="DCTERMS.URI	http://hdl.handle.net/11094/2899
DC.date" scheme="DCTERMS.W3CDTF	2003-06
DC.rights	©2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE..
citation_title	CMOS voltage reference based on gate work function differences in poly-Si controlled by conductivity type and impurity concentration
citation_author	Watanabe, Hirobumi
	Ando, Shunsuke
	Aota, Hideyuki
	Dainin, Masanori
	Chun, Yong-Jin
	Taniguchi, Kenji
citation_publisher	IEEE
citation_language	英語
citation_date	2003-06
citation_journal_title	IEEE Journal of Solid-State Circuits
citation_volume	38
citation_issue	6
citation_firstpage	987
citation_lastpage	994
citation_issn	00189200
citation_public_url	http://hdl.handle.net/11094/2899

閲覧可能ファイル

論文情報

論文詳細を表示