A new soft breakdown model for thin thermal SiO2 films under constant current stress

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タイトル	A new soft breakdown model for thin thermal SiO2 films under constant current stress
著者	Tomita, Takayuki Tomita, Takayuki
	Utsunomiya, Hiroto Utsunomiya, Hiroto
	Sakura, Toshiyuki Sakura, Toshiyuki
	Kamakura, Yoshinari Kamakura, Yoshinari
	Taniguchi, Kenji Taniguchi, Kenji
公開者	IEEE
掲載誌名	IEEE Transactions on Electron Devices
巻	46
号	1
開始ページ	159
終了ページ	164
刊行年月	1999-01
DOI (出版社版)	info:doi/10.1109/16.737455
URL	http://hdl.handle.net/11094/3066
権利情報	©1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
言語	英語
カテゴリ	学術雑誌論文 Journal Article

著者版フラグ	publisher
NII資源タイプ	学術雑誌論文
ローカル資源タイプ	学術雑誌論文
dcmi資源タイプ	text
日付	1999-01
DCTERMS.bibliographicCitation	IEEE Transactions on Electron Devices.46(1) P.159-P.164
DC.title	A new soft breakdown model for thin thermal SiO2 films under constant current stress
DC.creator	Tomita, Takayuki
	Utsunomiya, Hiroto
	Sakura, Toshiyuki
	Kamakura, Yoshinari
	Taniguchi, Kenji
DC.publisher	IEEE
DC.language" scheme="DCTERMS.RFC1766	英語
DCTERMS.issued" scheme="DCTERMS.W3CDTF	1999-01
DC.identifier	info:doi/10.1109/16.737455
DC.identifier" scheme="DCTERMS.URI	http://hdl.handle.net/11094/3066
DC.date" scheme="DCTERMS.W3CDTF	1999-01
DC.rights	©1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
citation_title	A new soft breakdown model for thin thermal SiO2 films under constant current stress
citation_author	Tomita, Takayuki
	Utsunomiya, Hiroto
	Sakura, Toshiyuki
	Kamakura, Yoshinari
	Taniguchi, Kenji
citation_publisher	IEEE
citation_language	英語
citation_date	1999-01
citation_journal_title	IEEE Transactions on Electron Devices
citation_volume	46
citation_issue	1
citation_firstpage	159
citation_lastpage	164
citation_doi	info:doi/10.1109/16.737455
citation_public_url	http://hdl.handle.net/11094/3066