Interfacial reaction and IMC growth kinetics at the Bi2Te3/Ag interface during isothermal aging

Pak, Seong Woo; Tatsumi, Hiroaki; Wang, Jianhao et al.

Intermetallics, 2025, 179, 108686

Number of Access:572（2025-08-14 16:32 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/100979

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Title
Interfacial reaction and IMC growth kinetics at the Bi2Te3/Ag interface during isothermal aging
Creator
CreatorName
Pak, Seong Woo
NRID
1000000961757 1000000961757
ORCID
0000-0002-0561-3100 0000-0002-0561-3100
researchmap permalink
hiroaki_tatsumi hiroaki_tatsumi
Scopus Author ID
54914528200 54914528200
CreatorName
Tatsumi, Hiroaki
CreatorName
Wang, Jianhao
CreatorName
Wu, Albert T.
NRID
1000090346180 1000090346180
ORCID
0000-0002-4363-9520 0000-0002-4363-9520
researchmap permalink
read0191232 read0191232
Scopus Author ID
57219209494 57219209494
CreatorName
Nishikawa, Hiroshi
Subject
Ag sintering
IMC growth kinetics
Intermetallic compound
Microstructural evolution
Thermoelectric
Description
Pak S.W., Tatsumi H., Wang J., et al. Interfacial reaction and IMC growth kinetics at the Bi2Te3/Ag interface during isothermal aging. Intermetallics 179, 108686 (2025); https://doi.org/10.1016/j.intermet.2025.108686.
Abstract
Bonding materials that can withstand high operating temperatures are essential for increasing the conversion efficiencies of thermoelectric power-generation devices. Sn-based solders commonly used to join thermoelectric materials and electrodes have the disadvantage of limiting the maximum operating temperature to 150 °C because of their low melting point. To overcome this limitation, in the present study, Ag nanoparticle paste with high-temperature stability, low electrical resistivity, high thermal conductivity, and printability was used for bonding a Bi2Te3 thermoelectric material and an electroless nickel immersion gold (ENIG)-plated Cu electrode. We performed isothermal aging at 200 °C from 0 to 1000 h to analyze the microstructural and thickness changes in intermetallic compounds (IMCs). Initially, a heterogeneous distribution of the IMC layers was observed at the bonding interface; over time, the IMC structures became clearly distinct. The IMC thickness increased from ≤3.0 μm (initial) to 45.6 μm in 1000 h, growing by a factor of approximately 15.2. We analyzed the growth kinetics of AgTe and BiTe IMCs. The growth exponent n of the AgTe IMC was found to be 0.3, indicating grain boundary diffusion with grain-growth control, whereas the n value of the BiTe IMC was 0.5, which is consistent with volumetric diffusion-controlled growth. These differences in the growth behavior indicate that different diffusion mechanisms affect the reliability and performance of the bonding interface.
Publisher
Elsevier Ltd
Source Title
Intermetallics
Volume (Issue)
179
Page
108686
Date of Issued
2025-04-01
Language
English
Handle URL
https://hdl.handle.net/11094/100979
PISSN
09669795
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.1016/j.intermet.2025.108686
Access Rights
open access
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This article is licensed under a Creative Commons Attribution 4.0 International License.
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Category
学術雑誌論文 Journal Article