Selective Anion Manipulation for Controlling the Thermoelectric Properties of Epitaxial SnO2 Films on r-Al2O3

Ishibe, Takafumi; Kozuki, Seiya; Komatsubara, Yuki; Uematsu, Yuto; Yoshizaki, Takashi; Yamashita, Yuichiro; Naruse, Nobuyasu; Mera, Yutaka; Kobayashi, Eiichi; Nakamura, Yoshiaki

doi:https://doi.org/10.1021/acsaem.4c03344

Selective Anion Manipulation for Controlling the Thermoelectric Properties of Epitaxial SnO2 Films on r-Al2O3

Ishibe, Takafumi; Kozuki, Seiya; Komatsubara, Yuki et al.

ACS Applied Energy Materials, 2025, 8(7), 4411-4417

Number of Access:904（2025-08-28 23:57 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/101046

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Title	Selective Anion Manipulation for Controlling the Thermoelectric Properties of Epitaxial SnO2 Films on r-Al2O3
Creator	NRID 1000050837359 1000050837359 ORCID 0000-0002-8662-875X 0000-0002-8662-875X researchmap permalink t-ishibe t-ishibe Scopus Author ID 55925365500 55925365500 CreatorName Ishibe, Takafumi
	CreatorName Kozuki, Seiya
	CreatorName Komatsubara, Yuki
	CreatorName Uematsu, Yuto
	CreatorName Yoshizaki, Takashi
	NRID 1000060462834 1000060462834 CreatorName Yamashita, Yuichiro
	NRID 1000030350408 1000030350408 CreatorName Naruse, Nobuyasu
	NRID 1000040219960 1000040219960 CreatorName Mera, Yutaka
	CreatorName Kobayashi, Eiichi
	NRID 1000060345105 1000060345105 ORCID 0000-0002-5387-1630 0000-0002-5387-1630 researchmap permalink research_nakamura research_nakamura Scopus Author ID 55615390400 55615390400 CreatorName Nakamura, Yoshiaki
Subject	anion
	epitaxy
	phonon
	SnO2
	thermoelectric conversion
	thin film
	transparent oxide
Description	This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Energy Materials, © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaem.4c03344.
Abstract	Introducing defects is one of the promising approaches for enhancing the thermoelectric property. In this study, we substantially reduce thermal conductivity while maintaining a high thermoelectric power factor (PF) by selectively manipulating O2- anion in domain-engineered SnO2 with conduction and valence bands mainly composed of Sn 5s and O 2p orbitals, respectively. Ion implantation can generate O defects more easily than Sn defects, resulting in a small impact on the Sn 5s conduction band and the formation of the O defect resonant level. The lattice thermal conductivity of the arsenic-implanted epitaxial SnO2 films with the manipulated O2- anions (2.6 Wm-1 K-1) is approximately half that of Sb-doped films without them (4.7 Wm-1 K-1), while the maximum PF of arsenic-implanted epitaxial SnO2 films remains relatively high owing to the high Seebeck coefficient originating from an effective mass increase. This selective O2- anion manipulation is an outstanding methodology of selectively causing thermal conductivity reduction while maintaining a high PF.
Publisher	American Chemical Society
Source Title	ACS Applied Energy Materials
Volume (Issue)	8(7)
Page	4411-4417
Date of Issued	2025-03-21
Language	English
Handle URL	https://hdl.handle.net/11094/101046
eISSN	25740962
Relation.isVersionOf	DOI (Publisher Version) https://doi.org/10.1021/acsaem.4c03344
Access Rights	embargoed access
CopyRight	The full-text file will be made open to the public on 21 March 2026 in accordance with the publisher's policy.
oaire:version	Accepted Manuscript
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCTERMS.bibliographicCitation	ACS Applied Energy Materials. 2025, 8(7), p. 4411-4417
DC.title	Selective Anion Manipulation for Controlling the Thermoelectric Properties of Epitaxial SnO2 Films on r-Al2O3
DC.creator	Ishibe, Takafumi
	Kozuki, Seiya
	Komatsubara, Yuki
	Uematsu, Yuto
	Yoshizaki, Takashi
	Yamashita, Yuichiro
	Naruse, Nobuyasu
	Mera, Yutaka
	Kobayashi, Eiichi
	Nakamura, Yoshiaki
DC.publisher	American Chemical Society
DC.language' scheme='DCTERMS.RFC1766	English
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2025-03-21
DC.identifier	https://doi.org/10.1021/acsaem.4c03344
DC.subject	anion
	epitaxy
	phonon
	SnO2
	thermoelectric conversion
	thin film
	transparent oxide
DC.description	This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Energy Materials, © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaem.4c03344.
DCTERMS.abstract	Introducing defects is one of the promising approaches for enhancing the thermoelectric property. In this study, we substantially reduce thermal conductivity while maintaining a high thermoelectric power factor (PF) by selectively manipulating O2- anion in domain-engineered SnO2 with conduction and valence bands mainly composed of Sn 5s and O 2p orbitals, respectively. Ion implantation can generate O defects more easily than Sn defects, resulting in a small impact on the Sn 5s conduction band and the formation of the O defect resonant level. The lattice thermal conductivity of the arsenic-implanted epitaxial SnO2 films with the manipulated O2- anions (2.6 Wm-1 K-1) is approximately half that of Sb-doped films without them (4.7 Wm-1 K-1), while the maximum PF of arsenic-implanted epitaxial SnO2 films remains relatively high owing to the high Seebeck coefficient originating from an effective mass increase. This selective O2- anion manipulation is an outstanding methodology of selectively causing thermal conductivity reduction while maintaining a high PF.
DC.rights	The full-text file will be made open to the public on 21 March 2026 in accordance with the publisher's policy.
DC.format	101046
citation_title	Selective Anion Manipulation for Controlling the Thermoelectric Properties of Epitaxial SnO2 Films on r-Al2O3
citation_author	Ishibe, Takafumi
	Kozuki, Seiya
	Komatsubara, Yuki
	Uematsu, Yuto
	Yoshizaki, Takashi
	Yamashita, Yuichiro
	Naruse, Nobuyasu
	Mera, Yutaka
	Kobayashi, Eiichi
	Nakamura, Yoshiaki
citation_publisher	American Chemical Society
citation_language	English
citation_date	2025-03-21
citation_journal_title	ACS Applied Energy Materials
citation_volume	8
citation_issue	7
citation_firstpage	4411
citation_lastpage	4417
citation_doi	https://doi.org/10.1021/acsaem.4c03344
citation_public_url	https://hdl.handle.net/11094/101046

Selective Anion Manipulation for Controlling the Thermoelectric Properties of Epitaxial SnO2 Films on r-Al2O3

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