Low temperature Al/AlN joint by Ag sinter paste from 180 °C: Interface formation and joint reliability

Chen, Chuantong; Liu, Li; Huo, Fupeng et al.

Ceramics International, 2025, 51(12), 16061-16072

Number of Access:337（2025-08-24 13:59 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/101353

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Title
Low temperature Al/AlN joint by Ag sinter paste from 180 °C: Interface formation and joint reliability
Creator
NRID
1000050791703 1000050791703
ORCID
0000-0002-2365-4387 0000-0002-2365-4387
researchmap permalink
chenchuantong chenchuantong
Scopus Author ID
57189686286 57189686286
CreatorName
Chen, Chuantong
CreatorName
Liu, Li
CreatorName
Huo, Fupeng
CreatorName
Kim, Dongjin
CreatorName
Lee, Sangmin
CreatorName
Li, Wanli
NRID
1000010154444 1000010154444
researchmap permalink
ksuganuma ksuganuma
CreatorName
Suganuma, Katsuaki
Subject
Metal/ceramic direct bonding
Molecular dynamics simulation
Ag sinter paste
Microstructure evolution
High-temperature storage
Interface bonding
Description
Chen C., Liu L., Huo F., et al. Low temperature Al/AlN joint by Ag sinter paste from 180 °C: Interface formation and joint reliability. Ceramics International 51, 16061 (2025); https://doi.org/10.1016/j.ceramint.2025.01.444.
Abstract
This study introduces a novel technology for direct bonding of bare aluminum (Al) to aluminum nitride (AlN) ceramics using Ag sinter paste under low-temperature conditions starting from 180 °C, and air environments. A robust interface shear strength of up to 40.5 MPa was achieved at a low sintering temperature of 300 °C under a pressure of 5 MPa, significantly lower than the melting point of Al (660 °C). Transmission Electron Microscopy (TEM) observations revealed that Ag particles attach to and inter-diffuse into the natural oxide layer of Al (Al2O3) and the AlN layers during the initial stages of sintering, forming a porous structure after sintering. Additionally, the interface bonding mechanism for Ag/Al and Ag/Al2O3 was analyzed using Molecular Dynamics (MD) simulations. The results indicated that the diffusion of Ag into Al2O3 occurs moderately faster than into Al, suggesting that the Al2O3 layer facilitates interface bonding for Ag during low-temperature, low-pressure sintering. The high-temperature reliability of the Al/AlN bonding structure was also examined by aging it at 300 °C for 500 h. Despite the microstructural evolution within the bonding layer, the shear strength remained above 20 MPa after aging, demonstrating excellent high-temperature stability.
Publisher
Elsevier Ltd
Source Title
Ceramics International
Volume (Issue)
51(12)
Page
16061-16072
Date of Issued
2025-04-24
Language
English
Handle URL
https://hdl.handle.net/11094/101353
PISSN
02728842
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.1016/j.ceramint.2025.01.444
Access Rights
open access
CopyRight
This article is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
oaire:version
Version of Record
Category
学術雑誌論文 Journal Article