High-speed and long-time growth of GaN by suppressing gas-phase reaction in the oxide vapor phase epitaxy method

Usami, Shigeyoshi; Shimizu, Ayumu; Higashiyama, Ritsuko; Imanishi, Masayuki; Takino, Junichi; Sumi, Tomoaki; Okayama, Yoshio; Maruyama, Mihoko; Yoshimura, Masashi; Hata, Masahiko; Isemura, Masashi; Mori, Yusuke

doi:https://doi.org/10.35848/1347-4065/adce8c

High-speed and long-time growth of GaN by suppressing gas-phase reaction in the oxide vapor phase epitaxy method

Usami, Shigeyoshi; Shimizu, Ayumu; Higashiyama, Ritsuko et al.

Japanese Journal of Applied Physics, 2025, 64(5), 055504

Number of Access:375（2025-08-01 14:36 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/101958

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Title	High-speed and long-time growth of GaN by suppressing gas-phase reaction in the oxide vapor phase epitaxy method
Creator	NRID 1000030897947 1000030897947 researchmap permalink s_usami s_usami Scopus Author ID 56770778200 56770778200 ORCID 0000-0002-9710-1718 0000-0002-9710-1718 CreatorName Usami, Shigeyoshi
	CreatorName Shimizu, Ayumu
	CreatorName Higashiyama, Ritsuko
	NRID 1000000795487 1000000795487 researchmap permalink Na-flux Na-flux Scopus Author ID 55361211900 55361211900 ORCID 0000-0001-9395-1750 0000-0001-9395-1750 CreatorName Imanishi, Masayuki
	CreatorName Takino, Junichi
	CreatorName Sumi, Tomoaki
	CreatorName Okayama, Yoshio
	NRID 1000020623903 1000020623903 ORCID 0000-0002-3453-8007 0000-0002-3453-8007 researchmap permalink marumarumi marumarumi Scopus Author ID 35307485800 35307485800 CreatorName Maruyama, Mihoko
	NRID 1000060314382 1000060314382 researchmap permalink read0191199 read0191199 Scopus Author ID 7403136552 7403136552 ORCID 0000-0002-0770-1251 0000-0002-0770-1251 CreatorName Yoshimura, Masashi
	CreatorName Hata, Masahiko
	CreatorName Isemura, Masashi
	NRID 1000090252618 1000090252618 ORCID 0000-0003-2952-7458 0000-0003-2952-7458 researchmap permalink mori_yusuke mori_yusuke Scopus Author ID 7404197134 7404197134 CreatorName Mori, Yusuke
Description	Usami S., Shimizu A., Higashiyama R., et al. High-speed and long-time growth of GaN by suppressing gas-phase reaction in the oxide vapor phase epitaxy method. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 64, 055504 (2025); https://doi.org/10.35848/1347-4065/adce8c.
Abstract	In the growth of GaN using the oxide vapor phase epitaxy method, the issue of polycrystallization was likely to occur during high-speed growth owing to the high reactivity of Ga₂O and NH₃. Previous studies have shown that polycrystallization can be reduced by suppressing the gas-phase reactions. Recent thermodynamic analysis has predicted that gas-phase reactions can be further suppressed while maintaining high growth rates in the low V/III ratio region with a high Ga₂O flow rate and a low NH3 flow rate. In this study, we performed crystal growth in the predicted region and verified the suppression of gas-phase reactions. Under conventional conditions, polycrystallization occurred when grown for a long time at a growth rate of 200 μm h⁻¹, but by applying growth conditions close to the predicted region, polycrystallization during long-time growth was suppressed, and a 1 mm thick GaN crystal was obtained.
Publisher	Institute of Physics
Source Title	Japanese Journal of Applied Physics
Volume (Issue)	64(5)
Page	055504
Date of Issued	2025-05-15
Language	English
Handle URL	https://hdl.handle.net/11094/101958
PISSN	00214922
eISSN	13474065
Relation.isVersionOf	DOI (Publisher Version) https://doi.org/10.35848/1347-4065/adce8c
Access Rights	embargoed access
CopyRight	This article is licensed under a Creative Commons Attribution 4.0 International License.
CopyRight	The full-text file will be made open to the public on 15 May 2026 in accordance with the publisher's policy.
oaire:version	Accepted Manuscript
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Japanese Journal of Applied Physics. 2025, 64(5), p. 055504
DC.title	High-speed and long-time growth of GaN by suppressing gas-phase reaction in the oxide vapor phase epitaxy method
DC.creator	Usami, Shigeyoshi
	Shimizu, Ayumu
	Higashiyama, Ritsuko
	Imanishi, Masayuki
	Takino, Junichi
	Sumi, Tomoaki
	Okayama, Yoshio
	Maruyama, Mihoko
	Yoshimura, Masashi
	Hata, Masahiko
	Isemura, Masashi
	Mori, Yusuke
DC.publisher	Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2025-05-15
DC.identifier	https://doi.org/10.35848/1347-4065/adce8c
DC.description	Usami S., Shimizu A., Higashiyama R., et al. High-speed and long-time growth of GaN by suppressing gas-phase reaction in the oxide vapor phase epitaxy method. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 64, 055504 (2025); https://doi.org/10.35848/1347-4065/adce8c.
DCTERMS.abstract	In the growth of GaN using the oxide vapor phase epitaxy method, the issue of polycrystallization was likely to occur during high-speed growth owing to the high reactivity of Ga₂O and NH₃. Previous studies have shown that polycrystallization can be reduced by suppressing the gas-phase reactions. Recent thermodynamic analysis has predicted that gas-phase reactions can be further suppressed while maintaining high growth rates in the low V/III ratio region with a high Ga₂O flow rate and a low NH3 flow rate. In this study, we performed crystal growth in the predicted region and verified the suppression of gas-phase reactions. Under conventional conditions, polycrystallization occurred when grown for a long time at a growth rate of 200 μm h⁻¹, but by applying growth conditions close to the predicted region, polycrystallization during long-time growth was suppressed, and a 1 mm thick GaN crystal was obtained.
DC.rights	This article is licensed under a Creative Commons Attribution 4.0 International License.
DC.rights	The full-text file will be made open to the public on 15 May 2026 in accordance with the publisher's policy.
DC.format	101958
citation_title	High-speed and long-time growth of GaN by suppressing gas-phase reaction in the oxide vapor phase epitaxy method
citation_author	Usami, Shigeyoshi
	Shimizu, Ayumu
	Higashiyama, Ritsuko
	Imanishi, Masayuki
	Takino, Junichi
	Sumi, Tomoaki
	Okayama, Yoshio
	Maruyama, Mihoko
	Yoshimura, Masashi
	Hata, Masahiko
	Isemura, Masashi
	Mori, Yusuke
citation_publisher	Institute of Physics
citation_language	English
citation_date	2025-05-15
citation_journal_title	Japanese Journal of Applied Physics
citation_volume	64
citation_issue	5
citation_firstpage	055504
citation_doi	https://doi.org/10.35848/1347-4065/adce8c
citation_public_url	https://hdl.handle.net/11094/101958

High-speed and long-time growth of GaN by suppressing gas-phase reaction in the oxide vapor phase epitaxy method

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