Observation of intravalley spin scattering in a doped multivalley semiconductor

Hamaya, K.; Okada, T.; Kawashima, K.; Naito, T.; Oki, K.; Kikuoka, S.; Wagatsuma, Y.; Yamada, M.; Sawano, K.

doi:https://doi.org/10.1103/physrevb.111.l081301

Observation of intravalley spin scattering in a doped multivalley semiconductor

Hamaya, K.; Okada, T.; Kawashima, K. et al.

Physical Review B, 2025, 111(8), L081301

Number of Access:169（2025-10-26 01:03 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/101980

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Title	Observation of intravalley spin scattering in a doped multivalley semiconductor
Creator	NRID 1000090401281 1000090401281 ORCID 0000-0002-5473-6086 0000-0002-5473-6086 researchmap permalink read0102192 read0102192 Scopus Author ID 9244846800 9244846800 CreatorName Hamaya, K.
	CreatorName Okada, T.
	CreatorName Kawashima, K.
	CreatorName Naito, T.
	CreatorName Oki, K.
	CreatorName Kikuoka, S.
	CreatorName Wagatsuma, Y.
	NRID 1000050778529 1000050778529 CreatorName Yamada, M.
	NRID 1000090409376 1000090409376 CreatorName Sawano, K.
Description	Hamaya K., Okada T., Kawashima K., et al. Observation of intravalley spin scattering in a doped multivalley semiconductor. Physical Review B 111, L081301 (2025); https://doi.org/10.1103/physrevb.111.l081301.
Abstract	To clarify spin-related phenomena within a single conduction valley of multivalley semiconductors, we experimentally study the effect of carrier concentration (n) on spin lifetime (τₛ) in strained Si₀.₁Ge₀.₉ at various temperatures. The spin diffusion length (λ) of strained Si₀.₁Ge₀.₉ is estimated from the contact distance dependence of the nonlocal spin signals for spin transport measurements in lateral spin-valve devices with varying n. The obtained λ is found to depend on n at temperatures below ∼100K, with the estimated τₛ value at 8 K varying significantly with n, ranging from 0.2 to 6.2 ns. These features suggest the presence of intravalley spin scattering at low temperatures even in doped multivalley semiconductors. Thus, strained n-Si₀.₁Ge₀.₉ with L-valley energy splitting serves as a powerful tool for investigating the spin relaxation mechanisms in a single conduction valley of doped multivalley semiconductors.
Publisher	American Physical Society
Source Title	Physical Review B
Volume (Issue)	111(8)
Page	L081301
Date of Issued	2025-02-18
Language	English
Handle URL	https://hdl.handle.net/11094/101980
PISSN	24699950
eISSN	24699969
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1103/physrevb.111.l081301
Access Rights	open access
CopyRight	Copyright 2025 by the American Physical Society
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Physical Review B. 2025, 111(8), p. L081301
DC.title	Observation of intravalley spin scattering in a doped multivalley semiconductor
DC.creator	Hamaya, K.
	Okada, T.
	Kawashima, K.
	Naito, T.
	Oki, K.
	Kikuoka, S.
	Wagatsuma, Y.
	Yamada, M.
	Sawano, K.
DC.publisher	American Physical Society
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2025-02-18
DC.identifier	https://doi.org/10.1103/physrevb.111.l081301
DC.description	Hamaya K., Okada T., Kawashima K., et al. Observation of intravalley spin scattering in a doped multivalley semiconductor. Physical Review B 111, L081301 (2025); https://doi.org/10.1103/physrevb.111.l081301.
DCTERMS.abstract	To clarify spin-related phenomena within a single conduction valley of multivalley semiconductors, we experimentally study the effect of carrier concentration (n) on spin lifetime (τₛ) in strained Si₀.₁Ge₀.₉ at various temperatures. The spin diffusion length (λ) of strained Si₀.₁Ge₀.₉ is estimated from the contact distance dependence of the nonlocal spin signals for spin transport measurements in lateral spin-valve devices with varying n. The obtained λ is found to depend on n at temperatures below ∼100K, with the estimated τₛ value at 8 K varying significantly with n, ranging from 0.2 to 6.2 ns. These features suggest the presence of intravalley spin scattering at low temperatures even in doped multivalley semiconductors. Thus, strained n-Si₀.₁Ge₀.₉ with L-valley energy splitting serves as a powerful tool for investigating the spin relaxation mechanisms in a single conduction valley of doped multivalley semiconductors.
DC.rights	Copyright 2025 by the American Physical Society
DC.format	101980
citation_title	Observation of intravalley spin scattering in a doped multivalley semiconductor
citation_author	Hamaya, K.
	Okada, T.
	Kawashima, K.
	Naito, T.
	Oki, K.
	Kikuoka, S.
	Wagatsuma, Y.
	Yamada, M.
	Sawano, K.
citation_publisher	American Physical Society
citation_language	English
citation_date	2025-02-18
citation_journal_title	Physical Review B
citation_volume	111
citation_issue	8
citation_firstpage	L081301
citation_doi	https://doi.org/10.1103/physrevb.111.l081301
citation_public_url	https://hdl.handle.net/11094/101980

Observation of intravalley spin scattering in a doped multivalley semiconductor

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