Effect of light irradiation on indentation-induced dislocation behavior in GaN oriented for basal slip

Kinoshita, Ryosuke; Li, Yan; Oguri, Hiroto et al.

Journal of the American Ceramic Society, 2025, 108(9), e20663

Number of Access:67（2025-10-29 08:05 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/102231

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Title
Effect of light irradiation on indentation-induced dislocation behavior in GaN oriented for basal slip
Creator
CreatorName
Kinoshita, Ryosuke
NRID
1000070930171 1000070930171
ORCID
0000-0002-9274-2516 0000-0002-9274-2516
researchmap permalink
liyan-osaka_univ liyan-osaka_univ
CreatorName
Li, Yan
CreatorName
Oguri, Hiroto
CreatorName
Higuchi, Kimitaka
CreatorName
Arai, Shigeo
NRID
1000050709483 1000050709483
CreatorName
Tochigi, Eita
NRID
1000020419675 1000020419675
ORCID
0000-0002-4324-1512 0000-0002-4324-1512
researchmap permalink
read0210196 read0210196
Scopus Author ID
56421164400 56421164400
CreatorName
Nakamura, Atsutomo
Subject
dislocation
GaN
nanoindentation
photoplastic effect
plasticity
semiconductors
Description
Kinoshita R., Li Y., Oguri H., et al. Effect of light irradiation on indentation-induced dislocation behavior in GaN oriented for basal slip. Journal of the American Ceramic Society, e20663 (2025); https://doi.org/10.1111/jace.20663.
Publisher
John Wiley and Sons Inc
Source Title
Journal of the American Ceramic Society
Volume (Issue)
108(9)
Page
e20663
Date of Issued
2025-05-14
Language
English
Handle URL
https://hdl.handle.net/11094/102231
PISSN
00027820
eISSN
15512916
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.1111/jace.20663
Access Rights
open access
CopyRight
This article is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
oaire:version
Version of Record
Category
学術雑誌論文 Journal Article