Efficient Electrical Manipulation of the Magnetization Process in an Epitaxially Controlled Co₂FeSi/BaTiO₃ Multiferroic Interface

Hu, Shaojie; Yamada, Shinya; Chang, Po Chun; Lin, Wen Chin; Hamaya, Kohei; Kimura, Takashi

doi:https://doi.org/10.1103/physrevapplied.20.034029

Efficient Electrical Manipulation of the Magnetization Process in an Epitaxially Controlled Co₂FeSi/BaTiO₃ Multiferroic Interface

Hu, Shaojie; Yamada, Shinya; Chang, Po Chun et al.

Physical Review Applied, 2023, 20(3), 034029

Number of Access:47（2025-08-14 15:06 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/102378

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Title	Efficient Electrical Manipulation of the Magnetization Process in an Epitaxially Controlled Co₂FeSi/BaTiO₃ Multiferroic Interface
Creator	CreatorName Hu, Shaojie
	NRID 1000030725049 1000030725049 ORCID 0000-0001-6340-9151 0000-0001-6340-9151 researchmap permalink shinyayamada shinyayamada Scopus Author ID 56140528400 56140528400 CreatorName Yamada, Shinya
	CreatorName Chang, Po Chun
	CreatorName Lin, Wen Chin
	NRID 1000090401281 1000090401281 ORCID 0000-0002-5473-6086 0000-0002-5473-6086 researchmap permalink read0102192 read0102192 Scopus Author ID 9244846800 9244846800 CreatorName Hamaya, Kohei
	NRID 1000080360535 1000080360535 CreatorName Kimura, Takashi
Description	Hu S., Yamada S., Chang P.C., et al. Efficient Electrical Manipulation of the Magnetization Process in an Epitaxially Controlled Co₂FeSi/BaTiO₃ Multiferroic Interface. Physical Review Applied 20, 034029 (2023); https://doi.org/10.1103/physrevapplied.20.034029.
Abstract	We investigate the magnetic properties of an epitaxial full-Heusler Co₂FeSi film with an atomically controlled multiferroic interface coupled with a BaTiO₃ substrate. The real-space observation of the magnetic domain structure using a magneto-optical Kerr microscope reveals perfect domain-pattern transfer from the ferroelectric substrate, indicating strong interface magnetoelectric coupling. The unique anisotropic magnetization reversal process was found to be induced by lateral modulation of the magnetic anisotropy constant through the strain-induced magnetoelectric coupling effect. The strong interface coupling yields efficient electrical manipulation of the magnetic property with the appropriate initial ferroelectric domain pattern. Our finding indicates that the interface multiferroic structure based on an epitaxially grown Heusler thin film is a promising approach for efficient electrical manipulation of magnetization.
Publisher	American Physical Society
Source Title	Physical Review Applied
Volume (Issue)	20(3)
Page	034029
Date of Issued	2023-09-14
Language	English
Handle URL	https://hdl.handle.net/11094/102378
eISSN	23317019
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1103/physrevapplied.20.034029
Access Rights	open access
CopyRight	Copyright 2023 by the American Physical Society
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Physical Review Applied. 2023, 20(3), p. 034029
DC.title	Efficient Electrical Manipulation of the Magnetization Process in an Epitaxially Controlled Co₂FeSi/BaTiO₃ Multiferroic Interface
DC.creator	Hu, Shaojie
	Yamada, Shinya
	Chang, Po Chun
	Lin, Wen Chin
	Hamaya, Kohei
	Kimura, Takashi
DC.publisher	American Physical Society
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2023-09-14
DC.identifier	https://doi.org/10.1103/physrevapplied.20.034029
DC.description	Hu S., Yamada S., Chang P.C., et al. Efficient Electrical Manipulation of the Magnetization Process in an Epitaxially Controlled Co₂FeSi/BaTiO₃ Multiferroic Interface. Physical Review Applied 20, 034029 (2023); https://doi.org/10.1103/physrevapplied.20.034029.
DCTERMS.abstract	We investigate the magnetic properties of an epitaxial full-Heusler Co₂FeSi film with an atomically controlled multiferroic interface coupled with a BaTiO₃ substrate. The real-space observation of the magnetic domain structure using a magneto-optical Kerr microscope reveals perfect domain-pattern transfer from the ferroelectric substrate, indicating strong interface magnetoelectric coupling. The unique anisotropic magnetization reversal process was found to be induced by lateral modulation of the magnetic anisotropy constant through the strain-induced magnetoelectric coupling effect. The strong interface coupling yields efficient electrical manipulation of the magnetic property with the appropriate initial ferroelectric domain pattern. Our finding indicates that the interface multiferroic structure based on an epitaxially grown Heusler thin film is a promising approach for efficient electrical manipulation of magnetization.
DC.rights	Copyright 2023 by the American Physical Society
DC.format	102378
citation_title	Efficient Electrical Manipulation of the Magnetization Process in an Epitaxially Controlled Co₂FeSi/BaTiO₃ Multiferroic Interface
citation_author	Hu, Shaojie
	Yamada, Shinya
	Chang, Po Chun
	Lin, Wen Chin
	Hamaya, Kohei
	Kimura, Takashi
citation_publisher	American Physical Society
citation_language	English
citation_date	2023-09-14
citation_journal_title	Physical Review Applied
citation_volume	20
citation_issue	3
citation_firstpage	034029
citation_doi	https://doi.org/10.1103/physrevapplied.20.034029
citation_public_url	https://hdl.handle.net/11094/102378

Efficient Electrical Manipulation of the Magnetization Process in an Epitaxially Controlled Co₂FeSi/BaTiO₃ Multiferroic Interface

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