Etching characteristics of tungsten and tungsten compounds by energetic fluorocarbon and argon ions

Kang, Hojun; Kawabata, Shunta; Ito, Tomoko et al.

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2025, 43(4), 043004

Number of Access:6（2025-08-28 17:09 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/102536

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Title
Etching characteristics of tungsten and tungsten compounds by energetic fluorocarbon and argon ions
Creator
CreatorName
Kang, Hojun
CreatorName
Kawabata, Shunta
NRID
1000010724784 1000010724784
researchmap permalink
plasma0326 plasma0326
CreatorName
Ito, Tomoko
CreatorName
Kang, Song Yun
CreatorName
Lee, Dongkyu
CreatorName
Lee, Yuna
NRID
1000060451118 1000060451118
ORCID
0000-0001-9951-6573 0000-0001-9951-6573
researchmap permalink
karahashi karahashi
Scopus Author ID
6602275601 6602275601
CreatorName
Karahashi, Kazuhiro
NRID
1000060301826 1000060301826
ORCID
0000-0001-6580-8797 0000-0001-6580-8797
researchmap permalink
satoshi_hamaguchi satoshi_hamaguchi
Scopus Author ID
55220082400 55220082400
CreatorName
Hamaguchi, Satoshi
Description
Kang H., Kawabata S., Ito T., et al. Etching characteristics of tungsten and tungsten compounds by energetic fluorocarbon and argon ions. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 43, 043004 (2025); https://doi.org/10.1116/6.0004658.
Abstract
Etching characteristics of tungsten (W), tungsten silicide (W3Si2), and tungsten oxide (WO3) by energetic trifluorocarbon (CF3+) and argon (Ar+) ion irradiation were examined with the use of mass-selected mono-energetic ion beams in an energy range between 500 and 4000 eV. It is found that the etching yield of W by CF3+ ion irradiation is notably higher than that by Ar+ ion irradiation when their ion energies are the same and sufficiently high, probably because of the formation of volatile tungsten fluoride (WFx) species in the case of CF3+ ion irradiation. Similarly, the etching yield of WO3 by CF3+ ion irradiation is also found to be much higher than that by Ar+ ion irradiation. In contrast, the etching yields of W3Si2 by CF3+ and Ar+ ion irradiation are found to be similar. On the other hand, the etch rates, i.e., the etched depths per unit time of W and W3Si2 by CF3+ or Ar+ ion irradiation, are found to be substantially lower than those of WO3. The results suggest that W and W3Si2 may well serve as hard mask materials for fluorocarbon-based plasma etching processes.
Publisher
AVS Science and Technology Society
Source Title
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume (Issue)
43(4)
Page
043004
Date of Issued
2025-06-02
Language
English
Handle URL
https://hdl.handle.net/11094/102536
PISSN
07342101
eISSN
15208559
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.1116/6.0004658
Access Rights
embargoed access
CopyRight
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in https://doi.org/10.1116/6.0004658.
The full-text file will be made open to the public on 2 June 2026 in accordance with the publisher's policy.
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Version of Record
Category
学術雑誌論文 Journal Article