Piezoelectric strain-mediated control of the tunnel magnetoresistance effect in magnetic tunnel junctions with a Co2FeSi/V/PMN-PT multiferroic heterostructure

Usami, T.; Kubo, Y.; Suzuki, K.; Mizukami, S.; Hamaya, K.

doi:https://doi.org/10.1063/5.0274897

Piezoelectric strain-mediated control of the tunnel magnetoresistance effect in magnetic tunnel junctions with a Co2FeSi/V/PMN-PT multiferroic heterostructure

Usami, T.; Kubo, Y.; Suzuki, K. et al.

Applied Physics Letters, 2025, 127(3), 032404

Number of Access:55（2025-10-25 16:13 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/102576

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Title	Piezoelectric strain-mediated control of the tunnel magnetoresistance effect in magnetic tunnel junctions with a Co2FeSi/V/PMN-PT multiferroic heterostructure
Creator	NRID 1000030880273 1000030880273 ORCID 0000-0001-9478-7331 0000-0001-9478-7331 researchmap permalink TakamasaUsami TakamasaUsami Scopus Author ID 57189692364 57189692364 CreatorName Usami, T.
	CreatorName Kubo, Y.
	CreatorName Suzuki, K.
	NRID 1000000339269 1000000339269 CreatorName Mizukami, S.
	NRID 1000090401281 1000090401281 ORCID 0000-0002-5473-6086 0000-0002-5473-6086 researchmap permalink read0102192 read0102192 Scopus Author ID 9244846800 9244846800 CreatorName Hamaya, K.
Description	Usami T., Kubo Y., Suzuki K., et al. Piezoelectric strain-mediated control of the tunnel magnetoresistance effect in magnetic tunnel junctions with a Co2FeSi/V/PMN-PT multiferroic heterostructure. Applied Physics Letters 127, 032404 (2025); https://doi.org/10.1063/5.0274897.
Abstract	Electric field (E) control of the tunnel magnetoresistance (TMR) effect is a key technology for reducing power consumption during data writing in spintronic memory devices. In this Letter, we explore E control of the TMR effect in magnetic tunnel junction devices with a Co2FeSi/V/PMN-PT multiferroic heterostructure. By controlling the polarity of the applied E to the multiferroic heterostructure, a repeatable and nonvolatile change in the TMR effect is achieved. The change in the TMR effect is strongly influenced by the microscopic domain structures in the Co2FeSi layer after the application of a certain E. To obtain optimal changes, it is important to consider the control of the microscopic domain structure governed by the magnetoelectric effect in the multiferroic heterostructure.
Publisher	American Institute of Physics
Source Title	Applied Physics Letters
Volume (Issue)	127(3)
Page	032404
Date of Issued	2025-07-21
Language	English
Handle URL	https://hdl.handle.net/11094/102576
PISSN	00036951
Relation.isVersionOf	DOI (Publisher Version) https://doi.org/10.1063/5.0274897
Access Rights	open access
CopyRight	The following article has been accepted by Applied Physics Letters. After it is published, it will be found at Link.
oaire:version	Accepted Manuscript
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Applied Physics Letters. 2025, 127(3), p. 032404
DC.title	Piezoelectric strain-mediated control of the tunnel magnetoresistance effect in magnetic tunnel junctions with a Co2FeSi/V/PMN-PT multiferroic heterostructure
DC.creator	Usami, T.
	Kubo, Y.
	Suzuki, K.
	Mizukami, S.
	Hamaya, K.
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2025-07-21
DC.identifier	https://doi.org/10.1063/5.0274897
DC.description	Usami T., Kubo Y., Suzuki K., et al. Piezoelectric strain-mediated control of the tunnel magnetoresistance effect in magnetic tunnel junctions with a Co2FeSi/V/PMN-PT multiferroic heterostructure. Applied Physics Letters 127, 032404 (2025); https://doi.org/10.1063/5.0274897.
DCTERMS.abstract	Electric field (E) control of the tunnel magnetoresistance (TMR) effect is a key technology for reducing power consumption during data writing in spintronic memory devices. In this Letter, we explore E control of the TMR effect in magnetic tunnel junction devices with a Co2FeSi/V/PMN-PT multiferroic heterostructure. By controlling the polarity of the applied E to the multiferroic heterostructure, a repeatable and nonvolatile change in the TMR effect is achieved. The change in the TMR effect is strongly influenced by the microscopic domain structures in the Co2FeSi layer after the application of a certain E. To obtain optimal changes, it is important to consider the control of the microscopic domain structure governed by the magnetoelectric effect in the multiferroic heterostructure.
DC.rights	The following article has been accepted by Applied Physics Letters. After it is published, it will be found at Link.
DC.format	102576
citation_title	Piezoelectric strain-mediated control of the tunnel magnetoresistance effect in magnetic tunnel junctions with a Co2FeSi/V/PMN-PT multiferroic heterostructure
citation_author	Usami, T.
	Kubo, Y.
	Suzuki, K.
	Mizukami, S.
	Hamaya, K.
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2025-07-21
citation_journal_title	Applied Physics Letters
citation_volume	127
citation_issue	3
citation_firstpage	032404
citation_doi	https://doi.org/10.1063/5.0274897
citation_public_url	https://hdl.handle.net/11094/102576

Piezoelectric strain-mediated control of the tunnel magnetoresistance effect in magnetic tunnel junctions with a Co2FeSi/V/PMN-PT multiferroic heterostructure

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