Amorphization and creation of lattice defects in crystalline Si by electron irradiation at low temperature

山崎, 順

Number of Access:2,262（2025-08-15 06:46 Counts）

Identifier to cite or link to this item: https://doi.org/10.11501/3183829

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15955_Abstract pdf None 106 KB 179 2014.06.09 要旨/Abstract  
15955_Dissertation pdf None 13.7 MB 143 2012.09.22 論文/Dissertation  

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Title
Amorphization and creation of lattice defects in crystalline Si by electron irradiation at low temperature
低温における電子照射による結晶Siのアモルファス化と格子欠陥生成
テイオン ニ オケル デンシ ショウシャ ニヨル ケッショウ Si ノ アモルファス カ ト コウシ ケッカン セイセイ
Creator
NRID
1000040335071 1000040335071
researchmap permalink
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Scopus Author ID
7006278028 7006278028
CreatorName
山崎, 順 ; ヤマサキ, ジュン
Degree Name
博士（理学）
Date of Granted
2001-03-23
Grantor
Osaka University
Faculty
理学
Specialty
物理学
Grant ID
甲第07732号
Description Number
15955
Language
English
Handle URL
https://hdl.handle.net/11094/1972
DOI
https://doi.org/10.11501/3183829
Access Rights
open access
oaire:version
Version of Record
Category
Doctoral Thesis with Full Text / Graduate School of Science / 2000
Doctoral Thesis / Graduate School of Science / 2000