Effects of Reducing Annealing Temperature on Ni/Al Ohmic Contacts to n- and p-Type 4H-SiC

Ito, Kazuhiro; Takeda, Hidehisa; Shirai, Yasuharu; Murakami, Masanori

doi:https://doi.org/10.18910/24856

Effects of Reducing Annealing Temperature on Ni/Al Ohmic Contacts to n- and p-Type 4H-SiC

Ito, Kazuhiro; Takeda, Hidehisa; Shirai, Yasuharu et al.

Transactions of JWRI, 2012, 41(2), 33-38

Number of Access:485（2025-08-14 12:34 Counts）

Identifier to cite or link to this item: https://doi.org/10.18910/24856

Link to primary information

File	Format	Terms of use	Size	Views	Date.Available	Description	information
jwri41_02-033	pdf	None	961 KB	211	2013.05.15

Item Information

Output File Export EndNote Basic Export Mendeley

Title	Effects of Reducing Annealing Temperature on Ni/Al Ohmic Contacts to n- and p-Type 4H-SiC
Creator	NRID 1000060303856 1000060303856 researchmap permalink kazuhiro_ito5 kazuhiro_ito5 Scopus Author ID 7410406840 7410406840 CreatorName Ito, Kazuhiro
	CreatorName Takeda, Hidehisa
	NRID 1000020154354 1000020154354 CreatorName Shirai, Yasuharu
	NRID 1000070229970 1000070229970 CreatorName Murakami, Masanori
Subject	Ni/Al contacts
	SiC substrates
	Ohmic contacts
	δ-Ni_2Si(Al)
	Annealing temperature effects
Abstract	Effects of reducing annealing temperature on a technique for the simultaneous formation of Ni/Al ohmic contacts exhibiting ohmic behavior to both n- and p-type SiC were investigated. The Ni/Al contacts reacted with the SiC substrates at 900℃, leading to formation of δ-Ni_2Si(Al). There was no contact consisting of δ-Ni_2Si(Al) after annealing at 900℃ for 20 min exhibited ohmic behavior to both n- and p-type SiC. Since Al concentration in the δ-Ni_2Si(Al) grains increased as the annealing temperature decreased due to less evaporation of the Al layer during annealing, and thus it is difficult to control the narrow range of Al concentration appropriate to exhibit ohmic behavior to both n- and p-type SiC using a conventional deposition technique. The specific contact resistances of the contacts which exhibited ohmic behavior to n-type SiC after annealing at 900℃ for 20 min were higher than those after annealing at 1000℃ for 5 min. In contrast, those which exhibited ohmic behavior to p-type SiC did not vary with annealing temperature. On the other hand, the specific contact resistance of the Ni(50 nm)/Al(10 nm) contact consisting of δ-Ni_2Si(8 at%Al) to p-type SiC was reduced to be about 4.0 × 10＾–4 Ωcm².
Publisher	大阪大学接合科学研究所
	オオサカダイガクセツゴウカガクケンキュウジョ
	Joining and Welding Research Institute, Osaka University
Source Title	Transactions of JWRI
Volume (Issue)	41(2)
Page	33-38
Date of Issued	2012-12
Language	English
Handle URL	https://hdl.handle.net/11094/24856
DOI	https://doi.org/10.18910/24856
PISSN	03874508
NCID	AA00867058
Access Rights	open access
oaire:version	Version of Record
Category	紀要論文 Departmental Bulletin Paper
Category	Transactions of JWRI / Vol.41 No.2 (2012-12)

Resource Type	departmental bulletin paper
Local Type	Departmental Bulletin Paper
DCMI Type	Text
DCTERMS.bibliographicCitation	Transactions of JWRI. 2012, 41(2), p. 33-38
DC.title	Effects of Reducing Annealing Temperature on Ni/Al Ohmic Contacts to n- and p-Type 4H-SiC
DC.creator	Ito, Kazuhiro
	Takeda, Hidehisa
	Shirai, Yasuharu
	Murakami, Masanori
DC.publisher	大阪大学接合科学研究所
	オオサカダイガクセツゴウカガクケンキュウジョ
	Joining and Welding Research Institute, Osaka University
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2012-12
DC.subject	Ni/Al contacts
	SiC substrates
	Ohmic contacts
	δ-Ni_2Si(Al)
	Annealing temperature effects
DCTERMS.abstract	Effects of reducing annealing temperature on a technique for the simultaneous formation of Ni/Al ohmic contacts exhibiting ohmic behavior to both n- and p-type SiC were investigated. The Ni/Al contacts reacted with the SiC substrates at 900℃, leading to formation of δ-Ni_2Si(Al). There was no contact consisting of δ-Ni_2Si(Al) after annealing at 900℃ for 20 min exhibited ohmic behavior to both n- and p-type SiC. Since Al concentration in the δ-Ni_2Si(Al) grains increased as the annealing temperature decreased due to less evaporation of the Al layer during annealing, and thus it is difficult to control the narrow range of Al concentration appropriate to exhibit ohmic behavior to both n- and p-type SiC using a conventional deposition technique. The specific contact resistances of the contacts which exhibited ohmic behavior to n-type SiC after annealing at 900℃ for 20 min were higher than those after annealing at 1000℃ for 5 min. In contrast, those which exhibited ohmic behavior to p-type SiC did not vary with annealing temperature. On the other hand, the specific contact resistance of the Ni(50 nm)/Al(10 nm) contact consisting of δ-Ni_2Si(8 at%Al) to p-type SiC was reduced to be about 4.0 × 10＾–4 Ωcm².
DC.identifier	10.18910/24856
DC.format	24856
citation_title	Effects of Reducing Annealing Temperature on Ni/Al Ohmic Contacts to n- and p-Type 4H-SiC
citation_author	Ito, Kazuhiro
	Takeda, Hidehisa
	Shirai, Yasuharu
	Murakami, Masanori
citation_publisher	大阪大学接合科学研究所
citation_language	English
citation_date	2012-12
citation_journal_title	Transactions of JWRI
citation_volume	41
citation_issue	2
citation_firstpage	33
citation_lastpage	38
citation_public_url	https://hdl.handle.net/11094/24856
citation_doi_detail	10.18910/24856
citation_doi	https://doi.org/10.18910/24856

Effects of Reducing Annealing Temperature on Ni/Al Ohmic Contacts to n- and p-Type 4H-SiC

Link to primary information

Item Information

Show details