Identifier to cite or link to this item: https://hdl.handle.net/11094/3339

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Title	Tunneling-assisted thermalization and recombination of nonequilibrium carriers in localized states : Application to the frequency-resolved drift mobility in amorphous silicon
Creator	NRID 1000080228486 1000080228486 researchmap permalink read0013739 read0013739 CreatorName Hattori, K.
	CreatorName Hirao, T.
	CreatorName Musa, Y.
	NRID 1000090144443 1000090144443 CreatorName Okamoto, H.
Publisher	The American Physical Society
Source Title	PHYSICAL REVIEW B
Volume (Issue)	64(12)
Page	125208-1-125208-15
Date of Issued	2001-09-10
Language	English
Handle URL	https://hdl.handle.net/11094/3339
PISSN	01631829
NCID	AA00362255
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1103/physrevb.64.125208
Access Rights	open access
CopyRight	Hattori, K., Hirao, T., Musa, Y., Okamoto, H., Physical Review B, 64, 12, 125208, 2001-09-10. "Copyright 2001 by the American Physical Society."
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

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