Carrier transport property in the amorphous silicon/amorphous silicon carbide multilayer studied by the transient grating technique

Hattori, K.; Mori, T.; Okamoto, H. et al.

Applied Physics Letters, 1987, 51(16), 1259-1261

Number of Access:612（2025-08-01 20:41 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/3442

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Title	Carrier transport property in the amorphous silicon/amorphous silicon carbide multilayer studied by the transient grating technique
Creator	NRID 1000080228486 1000080228486 researchmap permalink read0013739 read0013739 CreatorName Hattori, K.
	CreatorName Mori, T.
	NRID 1000090144443 1000090144443 CreatorName Okamoto, H.
	NRID 1000010029407 1000010029407 CreatorName Hamakawa, Y.
Description	Copyright 1987 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 51(16), 1259-1261, 1987 and may be found at http://dx.doi.org/10.1063/1.98698
Publisher	American Institute of Physics
Source Title	Applied Physics Letters
Volume (Issue)	51(16)
Page	1259-1261
Date of Issued	1987-10-19
Language	English
Handle URL	https://hdl.handle.net/11094/3442
PISSN	00036951
NCID	AA00543431
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/1.98698
Access Rights	open access
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Applied Physics Letters. 1987, 51(16), p. 1259-1261
DC.title	Carrier transport property in the amorphous silicon/amorphous silicon carbide multilayer studied by the transient grating technique
DC.creator	Hattori, K.
	Mori, T.
	Okamoto, H.
	Hamakawa, Y.
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	1987-10-19
DC.identifier	https://doi.org/10.1063/1.98698
DC.description	Copyright 1987 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 51(16), 1259-1261, 1987 and may be found at http://dx.doi.org/10.1063/1.98698
DC.format	3442
citation_title	Carrier transport property in the amorphous silicon/amorphous silicon carbide multilayer studied by the transient grating technique
citation_author	Hattori, K.
	Mori, T.
	Okamoto, H.
	Hamakawa, Y.
citation_publisher	American Institute of Physics
citation_language	English
citation_date	1987-10-19
citation_journal_title	Applied Physics Letters
citation_volume	51
citation_issue	16
citation_firstpage	1259
citation_lastpage	1261
citation_doi	https://doi.org/10.1063/1.98698
citation_public_url	https://hdl.handle.net/11094/3442