Degradation of inversion layer electron mobility due to interface traps in metaloxide‐semiconductor transistors

Matsuoka, Toshimasa; Taguchi, Shigenari; Khosru, Deen Quazi Mohd; Taniguchi, Kenji; Hamaguchi, Chihiro

doi:https://doi.org/10.1063/1.360013

Degradation of inversion layer electron mobility due to interface traps in metaloxide‐semiconductor transistors

Matsuoka, Toshimasa; Taguchi, Shigenari; Khosru, Deen Quazi Mohd et al.

Journal of Applied Physics, 1995, 78(5), 3252-3257

Number of Access:401（2025-08-14 00:41 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/51664

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Title	Degradation of inversion layer electron mobility due to interface traps in metaloxide‐semiconductor transistors
Creator	NRID 1000080324820 1000080324820 ORCID 0000-0003-3876-2679 0000-0003-3876-2679 researchmap permalink read0068628 read0068628 Scopus Author ID 7402741552 7402741552 CreatorName Matsuoka, Toshimasa
	CreatorName Taguchi, Shigenari
	CreatorName Khosru, Deen Quazi Mohd
	NRID 1000020192180 1000020192180 CreatorName Taniguchi, Kenji
	NRID 1000040029004 1000040029004 CreatorName Hamaguchi, Chihiro
Abstract	Degradation of inversion layer electron mobility during Fowler–Nordheim electron injection has been investigated using n‐channel metal‐oxide‐semiconductor transistors. The change of the reciprocal effective mobility, Δ(1/μEFF), has been found to be linearly related to the generated interface trap density, ΔN it, at a given effective electric field normal to the Si/SiO2 interface. The effect of trapped charges in the oxide on the mobility degradation is rather insignificant, which is attributed to the location of trapped charges from the Si/SiO2 interface. The dependence of mobility degradation on inversion layer electron density has also been explained using a transport theory based on two‐dimensional electron gas.
Publisher	AIP Publishing
Source Title	Journal of Applied Physics
Volume (Issue)	78(5)
Page	3252-3257
Date of Issued	1995-09
Language	English
Handle URL	https://hdl.handle.net/11094/51664
PISSN	00218979
eISSN	10897550
NCID	AA00693547
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/1.360013
Access Rights	open access
CopyRight	© 1995 American Institute of Physics
CopyRight	Reprinted with permission from [Toshimasa Matsuoka, Shigenari Taguchi, Quazi Deen Mohd Khosru, Kenji Taniguchi, and Chihiro Hamaguchi, Journal of Applied Physics, Vol78., 3252-3257, (1995)]. Copyright [1995], American Institute of Physics.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCMI Type	Text
DCTERMS.bibliographicCitation	Journal of Applied Physics. 1995, 78(5), p. 3252-3257
DC.title	Degradation of inversion layer electron mobility due to interface traps in metaloxide‐semiconductor transistors
DC.creator	Matsuoka, Toshimasa
	Taguchi, Shigenari
	Khosru, Deen Quazi Mohd
	Taniguchi, Kenji
	Hamaguchi, Chihiro
DC.publisher	AIP Publishing
DC.language' scheme='DCTERMS.RFC1766	English
DC.type' scheme='DCTERMS.DCMIType	Text
DCTERMS.issued' scheme='DCTERMS.W3CDTF	1995-09
DC.identifier	https://doi.org/10.1063/1.360013
DCTERMS.abstract	Degradation of inversion layer electron mobility during Fowler–Nordheim electron injection has been investigated using n‐channel metal‐oxide‐semiconductor transistors. The change of the reciprocal effective mobility, Δ(1/μEFF), has been found to be linearly related to the generated interface trap density, ΔN it, at a given effective electric field normal to the Si/SiO2 interface. The effect of trapped charges in the oxide on the mobility degradation is rather insignificant, which is attributed to the location of trapped charges from the Si/SiO2 interface. The dependence of mobility degradation on inversion layer electron density has also been explained using a transport theory based on two‐dimensional electron gas.
DC.rights	© 1995 American Institute of Physics
DC.rights	Reprinted with permission from [Toshimasa Matsuoka, Shigenari Taguchi, Quazi Deen Mohd Khosru, Kenji Taniguchi, and Chihiro Hamaguchi, Journal of Applied Physics, Vol78., 3252-3257, (1995)]. Copyright [1995], American Institute of Physics.
DC.format	51664
citation_title	Degradation of inversion layer electron mobility due to interface traps in metaloxide‐semiconductor transistors
citation_author	Matsuoka, Toshimasa
	Taguchi, Shigenari
	Khosru, Deen Quazi Mohd
	Taniguchi, Kenji
	Hamaguchi, Chihiro
citation_publisher	AIP Publishing
citation_language	English
citation_date	1995-09
citation_journal_title	Journal of Applied Physics
citation_volume	78
citation_issue	5
citation_firstpage	3252
citation_lastpage	3257
citation_doi	https://doi.org/10.1063/1.360013
citation_public_url	https://hdl.handle.net/11094/51664

Degradation of inversion layer electron mobility due to interface traps in metaloxide‐semiconductor transistors

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