Accurate Extraction of Effective Gate Resistance in RF MOSFET

Jo, Ikkyun; Matsuoka, Toshimasa

Circuits and Systems, 2015, 6(5), 143-151

Number of Access:668（2025-08-14 06:16 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/51764

Link to primary information 

File Format Terms of use Size Views Date.Available Description information
CS_6-5-143 pdf None 758 KB 516 2015.06.24 出版社版/publisher  
Creative Commons : Attribution

Item Information

Output File Export EndNote Basic Export Mendeley

Title
Accurate Extraction of Effective Gate Resistance in RF MOSFET
Creator
CreatorName
Jo, Ikkyun
NRID
1000080324820 1000080324820
ORCID
0000-0003-3876-2679 0000-0003-3876-2679
researchmap permalink
read0068628 read0068628
Scopus Author ID
7402741552 7402741552
CreatorName
Matsuoka, Toshimasa
Subject
MOSFET
NQS Effect
Gate Electrode Resistance
Elmore Constant
Abstract
This paper describes the gate electrode resistance of MOSFET and non-quasi-static (NQS) effect for RF operation. The vertical current paths between the silicide layer and poly-silicon are considered in the gate electrode. The vertical current paths are not effective in long-channel devices, but become more significant in short-channel devices. The gate resistance including vertical current paths can reproduce the practical RF characteristics well. By careful separation of the above gate electrode resistance and the NQS effect, the small-signal gate-source admittance can be analyzed with 130-nm CMOS process. Elmore constant (κ) of the NQS gate-source resistance is about five for long-channel devices, while it decreases down to about three for short-channel devices.
Publisher
Scientific Research Publishing Inc.
Source Title
Circuits and Systems
Volume (Issue)
6(5)
Page
143-151
Date of Issued
2015-05-22
Language
English
Handle URL
https://hdl.handle.net/11094/51764
PISSN
21531285
eISSN
21531293
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.4236/cs.2015.65015
Access Rights
open access
CopyRight
© 2015 by authors and Scientific Research Publishing Inc. This article is licensed under a Creative Commons Attribution 4.0 International License.
oaire:version
Version of Record
Category
学術雑誌論文 Journal Article