Evaluation of high temperature reliability of SiC die attached structure with sinter micron-size Ag particles paste on Ni-P/Pd/Au plated substrates

Chen, Chuantong; Zhang, Zheng; Suganuma, Katsuaki

Proceedings - 2020 IEEE 8th Electronics System-Integration Technology Conference, ESTC 2020, 2020

Number of Access:495（2025-08-24 13:59 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/78252

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Title
Evaluation of high temperature reliability of SiC die attached structure with sinter micron-size Ag particles paste on Ni-P/Pd/Au plated substrates
Creator
NRID
1000050791703 1000050791703
ORCID
0000-0002-2365-4387 0000-0002-2365-4387
researchmap permalink
chenchuantong chenchuantong
Scopus Author ID
57189686286 57189686286
CreatorName
Chen, Chuantong
CreatorName
Zhang, Zheng
NRID
1000010154444 1000010154444
researchmap permalink
ksuganuma ksuganuma
CreatorName
Suganuma, Katsuaki
Subject
Ag sinter joining
Ag-Au joint
ENEPIG metallization
High temperature reliability
SiC power modules
Description
C. Chen, Z. Zhang and K. Suganuma, "Evaluation of high temperature reliability of SiC die attached structure with sinter micron-size Ag particles paste on Ni-P/Pd/Au plated substrates," 2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC), Tønsberg, Vestfold, Norway, 2020, pp. 1-5, doi: 10.1109/ESTC48849.2020.9229850.
Abstract
Next generation power modules empowered by wide bandgap semiconductors like SiC and GaN can operate for a higher power than Si-based semiconductors at a high temperature over 250 °C. Ag sinter joining as a die attach material with a high melting point and good thermal conductive properties have obtained many attentions for the next generation power modules. This study investigated the bonding properties and the high temperature reliability of Ag sinter joining on ENEPIG (Electroless Ni plating (EN), Electroless palladium plating (EP) and immersion gold plating (IG)) metallized DBA substrates. The initial die shear strength for SiC (3x3 mm2) power modules was 33.9 MPa at 250°C sintering without assisted pressure in air conduction. The high temperature reliability of Ag sinter joint structure was evaluated at 250°C aging for 1000 h. The Ag-Au interface bonding mechanism, fracture behaviors and microstructure evolution of sinter Ag-Au joint were systematically analyzed. In addition, the connected Ag particles change to coarse with pore size increase during the aging process. The Ag-Au inter-diffusion layer also increased with the aging time but not clearly delamination occurrence. The die shear strength was slightly increased from the initial to 36.5 MPa after aging 1000 h, which meaning the Ag-Au joint possessed a good high temperature reliability. This study should add the understanding of the reliability issues of Ag sinter joining on Au finished substrate for its applications at high temperature.
Publisher
Institute of Electrical and Electronics Engineers Inc.
Source Title
Proceedings - 2020 IEEE 8th Electronics System-Integration Technology Conference, ESTC 2020
Date of Issued
2020-09-15
Language
English
Handle URL
https://hdl.handle.net/11094/78252
Relation.isVersionOf
DOI (Publisher Version)
https://doi.org/10.1109/ESTC48849.2020.9229850
Access Rights
open access
CopyRight
© 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
oaire:version
Accepted Manuscript
Category
会議発表論文 Conference Paper