Self-limiting processes in thermal atomic layer etching of nickel by hexafluoroacetylacetone

Basher, Abdulrahman H.; Hamada, Ikutaro; Hamaguchi, Satoshi

Japanese Journal of Applied Physics, 2020, 59(9), 090905

Number of Access:535（2025-08-14 16:33 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/78315

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Title
Self-limiting processes in thermal atomic layer etching of nickel by hexafluoroacetylacetone
Creator
CreatorName
Basher, Abdulrahman H.
NRID
1000080419465 1000080419465
ORCID
0000-0001-5112-2452 0000-0001-5112-2452
researchmap permalink
ihamada ihamada
Scopus Author ID
7005614511 7005614511
CreatorName
Hamada, Ikutaro
NRID
1000060301826 1000060301826
ORCID
0000-0001-6580-8797 0000-0001-6580-8797
researchmap permalink
satoshi_hamaguchi satoshi_hamaguchi
Scopus Author ID
55220082400 55220082400
CreatorName
Hamaguchi, Satoshi
Description
Abdulrahman H. Basher, Ikutaro Hamada, and Satoshi Hamaguchi. Jpn. J. Appl. Phys. 59 090905.
Abstract
In thermal atomic layer etching (ALE) of Ni, a thin oxidized Ni layer is removed by a hexafluoroacetylacetone (hfacH) etchant gas at an elevated surface temperature, and etching ceases when a metallic Ni surface appears (self-limiting step). However, atomistic details of the self-limiting step was not well understood. With periodic density-functional-theory calculations, it is found that hfacH molecules barrierlessly adsorb and tend to decompose on a metallic Ni surface, in contrast to the case of a NiO surface, where they can form volatile Ni(hfac)2. Our results clarify the origin of the self-limiting process in the thermal ALE.
Publisher
IOP Publishing Ltd
Source Title
Japanese Journal of Applied Physics
Volume (Issue)
59(9)
Page
090905
Date of Issued
2020-09
Language
English
Handle URL
https://hdl.handle.net/11094/78315
PISSN
00214922
eISSN
13474065
NCID
AA12295836
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.35848/1347-4065/aba9a7
Access Rights
open access
CopyRight
© 2020 The Japan Society of Applied Physics. This article is licensed under a Creative Commons Attribution 4.0 International License.
oaire:version
Version of Record
Category
学術雑誌論文 Journal Article