Low energy indium or gallium ion implantations to SiO2 thin films for development of novel catalysts

Yoshimura, Satoru; Kiuchi, Masato; Nishimoto, Yoshihiro et al.

e-Journal of Surface Science and Nanotechnology, 2014, 12, 197-202

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Identifier to cite or link to this item: https://hdl.handle.net/11094/78467

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Title
Low energy indium or gallium ion implantations to SiO2 thin films for development of novel catalysts
Creator
NRID
1000040294029 1000040294029
researchmap permalink
read0051706 read0051706
Scopus Author ID
36093428100 36093428100
CreatorName
Yoshimura, Satoru
NRID
1000050356862 1000050356862
researchmap permalink
read0005090 read0005090
CreatorName
Kiuchi, Masato
NRID
1000030550115 1000030550115
ORCID
0000-0002-7182-0503 0000-0002-7182-0503
researchmap permalink
nishimoto123 nishimoto123
Scopus Author ID
15048464600 15048464600
CreatorName
Nishimoto, Yoshihiro
NRID
1000040273601 1000040273601
ORCID
0000-0002-6618-2893 0000-0002-6618-2893
researchmap permalink
read0185253 read0185253
Scopus Author ID
7402645045 7402645045
CreatorName
Yasuda, Makoto
NRID
1000020144438 1000020144438
CreatorName
Baba, Akio
NRID
1000060301826 1000060301826
ORCID
0000-0001-6580-8797 0000-0001-6580-8797
researchmap permalink
satoshi_hamaguchi satoshi_hamaguchi
Scopus Author ID
55220082400 55220082400
CreatorName
Hamaguchi, Satoshi
Subject
Catalysis
Gallium
Indium
Ion implantation
Description
Satoru Yoshimura, Masato Kiuchi, Yoshihiro Nishimoto, Makoto Yasuda, Akio Baba, Satoshi Hamaguchi, Low Energy Indium or Gallium Ion Implantations to SiO2 Thin Films for Development of Novel Catalysts, e-Journal of Surface Science and Nanotechnology, 2014, Volume 12, Pages 197-202, Released April 26, 2014, Online ISSN 1348-0391, https://doi.org/10.1380/ejssnt.2014.197, https://www.jstage.jst.go.jp/article/ejssnt/12/0/12_197/_article/-char/en
Abstract
It has been demonstrated that indium (In) implanted silicon dioxide (SiO thin films catalyze a reaction of benzhydrol with acetylacetone. In this study, it is found that the threshold In ion incident energy for manifestation of the catalytic effect exists between 400 and 470 eV. Furthermore, a technique to implant gallium (Ga) to SiOfilms has been developed with highly controlled doses and injection energies for the formation of thin films that promote Ga catalysts. The efficiency of catalytic reactions by Ga implanted SiOthin films is yet to be improved. Unlike In implanted SiO2, the reason why no significant reaction was observed in the case of Ga implanted SiOfilms examined in this study seems that the Ga ion energy was so low that deposited surface Ga atoms should lack interactions with Si atoms for the manifestation of catalytic reaction. © 2014 The Surface Science Society of Japan.
Publisher
The Japan Society of Vacuum and Surface Science
Source Title
e-Journal of Surface Science and Nanotechnology
Volume (Issue)
12
Page
197-202
Date of Issued
2014-04-26
Language
English
Handle URL
https://hdl.handle.net/11094/78467
eISSN
13480391
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.1380/ejssnt.2014.197
Access Rights
open access
CopyRight
© 2014 The Surface Science Society of Japan. This article is licensed under a Creative Commons Attribution 4.0 International License.
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Version of Record
Category
学術雑誌論文 Journal Article