Characteristics of silicon etching by silicon chloride ions

Ito, Tomoko; Karahashi, Kazuhiro; Kang, Song Yun et al.

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2013, 31(3), 031301

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Identifier to cite or link to this item: https://hdl.handle.net/11094/78469

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Title
Characteristics of silicon etching by silicon chloride ions
Creator
NRID
1000010724784 1000010724784
researchmap permalink
plasma0326 plasma0326
Scopus Author ID
57189987336 57189987336
CreatorName
Ito, Tomoko
NRID
1000060451118 1000060451118
ORCID
0000-0001-9951-6573 0000-0001-9951-6573
researchmap permalink
karahashi karahashi
Scopus Author ID
6602275601 6602275601
CreatorName
Karahashi, Kazuhiro
CreatorName
Kang, Song Yun
NRID
1000060301826 1000060301826
ORCID
0000-0001-6580-8797 0000-0001-6580-8797
researchmap permalink
satoshi_hamaguchi satoshi_hamaguchi
Scopus Author ID
55220082400 55220082400
CreatorName
Hamaguchi, Satoshi
Description
Tomoko Ito and Kazuhiro Karahashi, Journal of Vacuum Science & Technology A 31, 031301 (2013) https://doi.org/10.1116/1.4793426
Abstract
Plasmas generated from halogen-containing gases, such as Cl2 or HBr, have been widely used in gate etching processes for semiconductor chip manufacturing. Such plasmas may contain silicon halide ions formed by the ionization of etching products that enter the plasma. In this study, to illustrate Si etching by such silicon halide ions, the sputtering yield of Si by SiClx (with x 1 or 3) ions has been obtained as a function of the incident ion energy by using a mass-selected ion beam injection system. It has been found that, at sufficiently low energy, the incidence of SiCl ions leads to the deposition of Si which may affect profile control in microelectronic device fabrication processes. © 2013 American Vacuum Society.
Publisher
American Institute of Physics
Source Title
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume (Issue)
31(3)
Page
031301
Date of Issued
2013-05
Language
English
Handle URL
https://hdl.handle.net/11094/78469
PISSN
07342101
NCID
AA10635514
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.1116/1.4793426
Access Rights
open access
CopyRight
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Vacuum Science & Technology A 31, 031301 (2013) and may be found at https://doi.org/10.1116/1.4793426.
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Category
学術雑誌論文 Journal Article