Low energy metal ion beam production with a modified freeman-type ion source for development of novel catalysts

Yoshimura, S.; Kiuchi, M.; Nishimoto, Y. et al.

e-Journal of Surface Science and Nanotechnology, 2012, 10, 139-144

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Identifier to cite or link to this item: https://hdl.handle.net/11094/78470

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Title
Low energy metal ion beam production with a modified freeman-type ion source for development of novel catalysts
Creator
NRID
1000040294029 1000040294029
researchmap permalink
read0051706 read0051706
Scopus Author ID
36093428100 36093428100
CreatorName
Yoshimura, S.
NRID
1000050356862 1000050356862
researchmap permalink
read0005090 read0005090
CreatorName
Kiuchi, M.
NRID
1000030550115 1000030550115
ORCID
0000-0002-7182-0503 0000-0002-7182-0503
researchmap permalink
nishimoto123 nishimoto123
Scopus Author ID
15048464600 15048464600
CreatorName
Nishimoto, Y.
CreatorName
Yasuda, M.
NRID
1000020144438 1000020144438
CreatorName
Baba, A.
NRID
1000060301826 1000060301826
ORCID
0000-0001-6580-8797 0000-0001-6580-8797
researchmap permalink
satoshi_hamaguchi satoshi_hamaguchi
Scopus Author ID
55220082400 55220082400
CreatorName
Hamaguchi, S.
Subject
Bismuth
Catalysis
Gold
Indium
Ion implantation
Description
S. Yoshimura, M. Kiuchi, Y. Nishimoto, M. Yasuda, A. Baba, S. Hamaguchi, Low Energy Metal Ion Beam Production with a Modified Freeman-Type Ion Source for Development of Novel Catalysts, e-Journal of Surface Science and Nanotechnology, 2012, Volume 10, Pages 139-144, Released April 27, 2012, Online ISSN 1348-0391, https://doi.org/10.1380/ejssnt.2012.139, https://www.jstage.jst.go.jp/article/ejssnt/10/0/10_0_139/_article/-char/en
Abstract
Interactions of indium (In) and silicon (Si) atoms have been found to catalyze certain organic chemical reactions with high efficiency. In a recent paper [S. Yoshimura, et al., Appl. Surf. Sci., 257, 192 (2010)], it has been demonstrated that an In injected SiO2 thin film formed under specific ion beam conditions catalyzes a reaction of benzhydrol with acetylacetone. In this study a technique to implant bismuth (Bi) ions into SiO2 thin films has been developed with highly controlled ion doses and injection energies for the formation of thin films that promote Bi(III) catalysis in organic chemistry. For this purpose, the Freeman-type ion source of our beam system was modified with a new sputtering target. In addition, sticking probabilities of Bi have been obtained with the use of a quartz crystal microbalance. Although efficiency of catalytic reactions by a Bi implanted SiO2 thin film is yet to be improved, the technique provides a Bi-Si based novel catalyst of a thin film type. © 2012 The Surface Science Society of Japan.
Publisher
The Japan Society of Vacuum and Surface Science
Source Title
e-Journal of Surface Science and Nanotechnology
Volume (Issue)
10
Page
139-144
Date of Issued
2012-04-27
Language
English
Handle URL
https://hdl.handle.net/11094/78470
eISSN
13480391
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.1380/ejssnt.2012.139
Access Rights
open access
CopyRight
© 2012 The Surface Science Society of Japan. This article is licensed under a Creative Commons Attribution 4.0 International License.
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Version of Record
Category
学術雑誌論文 Journal Article