Hydrogen effects in hydrofluorocarbon plasma etching of silicon nitride: Beam study with CF+, CF2+, CHF2 +, and CH2F+ ions

Ito, Tomoko; Karahashi, Kazuhiro; Fukasawa, Masanaga; Tatsumi, Tetsuya; Hamaguchi, Satoshi

doi:https://doi.org/10.1116/1.3610981

Hydrogen effects in hydrofluorocarbon plasma etching of silicon nitride: Beam study with CF+, CF2+, CHF2 +, and CH2F+ ions

Ito, Tomoko; Karahashi, Kazuhiro; Fukasawa, Masanaga et al.

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2011, 29(5), 050601

Number of Access:546（2025-08-14 12:34 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/78472

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Title	Hydrogen effects in hydrofluorocarbon plasma etching of silicon nitride: Beam study with CF+, CF2+, CHF2 +, and CH2F+ ions
Creator	NRID 1000010724784 1000010724784 researchmap permalink plasma0326 plasma0326 Scopus Author ID 57189987336 57189987336 CreatorName Ito, Tomoko
	NRID 1000060451118 1000060451118 ORCID 0000-0001-9951-6573 0000-0001-9951-6573 researchmap permalink karahashi karahashi Scopus Author ID 6602275601 6602275601 CreatorName Karahashi, Kazuhiro
	CreatorName Fukasawa, Masanaga
	CreatorName Tatsumi, Tetsuya
	NRID 1000060301826 1000060301826 ORCID 0000-0001-6580-8797 0000-0001-6580-8797 researchmap permalink satoshi_hamaguchi satoshi_hamaguchi Scopus Author ID 55220082400 55220082400 CreatorName Hamaguchi, Satoshi
Description	Tomoko Ito and Kazuhiro Karahashi, Journal of Vacuum Science & Technology A 29, 050601 (2011) https://doi.org/10.1116/1.3610981
Abstract	Hydrogen in hydrofluorocarbon plasmas plays an important role in silicon nitride (Si3N4) reactive ion etching. This study focuses on the elementary reactions of energetic CHF 2 + and CH2F+ ions with Si3N4 surfaces. In the experiments, Si 3N4 surfaces were irradiated by monoenergetic (500-1500 eV) beams of CHF2+ and CH2F+ ions as well as hydrogen-free CF2+ and CF+ ions generated by a mass-selected ion beam system and their etching yields and surface properties were examined. It has been found that, when etching takes place, the etching rates of Si3N4 by hydrofluorocarbon ions, i.e., CHF2+ and CH2F+, are higher than those by the corresponding fluorocarbon ions, i.e., CF 2+ and CF+, respectively. When carbon film deposition takes place, it has been found that hydrogen of incident hydrofluorocarbon ions tends to scavenge fluorine of the deposited film, reducing its fluorine content. © 2011 American Vacuum Society.
Publisher	American Institute of Physics
Source Title	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume (Issue)	29(5)
Page	050601
Date of Issued	2011-09
Language	English
Handle URL	https://hdl.handle.net/11094/78472
PISSN	07342101
NCID	AA10635514
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1116/1.3610981
Access Rights	open access
CopyRight	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Vacuum Science & Technology A 29, 050601 (2011) and may be found at https://doi.org/10.1116/1.3610981.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCTERMS.bibliographicCitation	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2011, 29(5), p. 050601
DC.title	Hydrogen effects in hydrofluorocarbon plasma etching of silicon nitride: Beam study with CF+, CF2+, CHF2 +, and CH2F+ ions
DC.creator	Ito, Tomoko
	Karahashi, Kazuhiro
	Fukasawa, Masanaga
	Tatsumi, Tetsuya
	Hamaguchi, Satoshi
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2011-09
DC.identifier	https://doi.org/10.1116/1.3610981
DC.description	Tomoko Ito and Kazuhiro Karahashi, Journal of Vacuum Science & Technology A 29, 050601 (2011) https://doi.org/10.1116/1.3610981
DCTERMS.abstract	Hydrogen in hydrofluorocarbon plasmas plays an important role in silicon nitride (Si3N4) reactive ion etching. This study focuses on the elementary reactions of energetic CHF 2 + and CH2F+ ions with Si3N4 surfaces. In the experiments, Si 3N4 surfaces were irradiated by monoenergetic (500-1500 eV) beams of CHF2+ and CH2F+ ions as well as hydrogen-free CF2+ and CF+ ions generated by a mass-selected ion beam system and their etching yields and surface properties were examined. It has been found that, when etching takes place, the etching rates of Si3N4 by hydrofluorocarbon ions, i.e., CHF2+ and CH2F+, are higher than those by the corresponding fluorocarbon ions, i.e., CF 2+ and CF+, respectively. When carbon film deposition takes place, it has been found that hydrogen of incident hydrofluorocarbon ions tends to scavenge fluorine of the deposited film, reducing its fluorine content. © 2011 American Vacuum Society.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Vacuum Science & Technology A 29, 050601 (2011) and may be found at https://doi.org/10.1116/1.3610981.
DC.format	78472
citation_title	Hydrogen effects in hydrofluorocarbon plasma etching of silicon nitride: Beam study with CF+, CF2+, CHF2 +, and CH2F+ ions
citation_author	Ito, Tomoko
	Karahashi, Kazuhiro
	Fukasawa, Masanaga
	Tatsumi, Tetsuya
	Hamaguchi, Satoshi
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2011-09
citation_journal_title	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
citation_volume	29
citation_issue	5
citation_firstpage	050601
citation_doi	https://doi.org/10.1116/1.3610981
citation_public_url	https://hdl.handle.net/11094/78472

Hydrogen effects in hydrofluorocarbon plasma etching of silicon nitride: Beam study with CF+, CF2+, CHF2 +, and CH2F+ ions

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