journal article

Journal Article

Journal of Applied Physics. 2006, 100(12), p. 123305

Molecular dynamics study on Ar ion bombardment effects in amorphous SiO2 deposition processes

American Institute of Physics

English

2006-12-15

https://doi.org/10.1063/1.2401651

M. Taguchi et al., Journal of Applied Physics 100, 123305 (2006) https://doi.org/10.1063/1.2401651

Argon ion bombardment effects on growing amorphous Si O2 films during reactive sputtering deposition processes were examined based on molecular dynamics (MD) and Monte Carlo (MC) simulation techniques. The system we have considered here is a film that is subject to energetic Ar bombardment while it is formed by surface reactions of Si and O atoms separately supplied at low kinetic energies. It has been found that (1) Ar injections preferentially sputter O atoms from the surface over Si and (2) also have a compressing effect on the growing film during the deposition process. In other words, our MD/MC simulations have demonstrated at the atomic level that, with higher energy Ar injections, an amorphous Si O2 film grown in a reactive sputtering deposition process is denser and more Si rich. © 2006 American Institute of Physics.

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 100, 123305 (2006) and may be found at https://doi.org/10.1063/1.2401651.

78480

Molecular dynamics study on Ar ion bombardment effects in amorphous SiO2 deposition processes

American Institute of Physics

English

2006-12-15

Journal of Applied Physics

100

12

123305

https://doi.org/10.1063/1.2401651

https://hdl.handle.net/11094/78480