Temporal evolution of ion fragment production from methylsilane by a hot tungsten wire

Yoshimura, Satoru; Toh, Akinori; Toyoshima, Takahiro; Kiuchi, Masato; Hamaguchi, Satoshi

doi:https://doi.org/10.1063/1.2364050

Temporal evolution of ion fragment production from methylsilane by a hot tungsten wire

Yoshimura, Satoru; Toh, Akinori; Toyoshima, Takahiro et al.

Journal of Applied Physics, 2006, 100(9), 096107

Number of Access:562（2025-08-14 18:26 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/78481

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Title	Temporal evolution of ion fragment production from methylsilane by a hot tungsten wire
Creator	NRID 1000040294029 1000040294029 researchmap permalink read0051706 read0051706 Scopus Author ID 36093428100 36093428100 CreatorName Yoshimura, Satoru
	CreatorName Toh, Akinori
	CreatorName Toyoshima, Takahiro
	NRID 1000050356862 1000050356862 researchmap permalink read0005090 read0005090 CreatorName Kiuchi, Masato
	NRID 1000060301826 1000060301826 ORCID 0000-0001-6580-8797 0000-0001-6580-8797 researchmap permalink satoshi_hamaguchi satoshi_hamaguchi Scopus Author ID 55220082400 55220082400 CreatorName Hamaguchi, Satoshi
Description	S. Yoshimura et al., Journal of Applied Physics 100, 096107 (2006) https://doi.org/10.1063/1.2364050
Abstract	Temporal evolution of ion fragment production from gaseous methylsilane in contact with a hot tungsten wire was measured with a use of a low-energy mass analyzed ion beam system. The mechanisms of molecular fragmentation in the system are similar to those for typical catalytic chemical vapor deposition processes. The fragmentation rates vary during the process due to surface modification of the tungsten wire. The extent of surface modification depends on the tungsten temperature. When the tungsten temperature was set to 1940 °C, ion fragments were produced initially but the production terminated about 1 h after the start of the experiment. The termination of ion production seems to be caused by the formation of a thick 3C-SiC layer on the tungsten surface, which was identified by x-ray diffraction measurement. When the tungsten temperature was set to 2220 °C, ion fragment production continued at least for 8 h. In this case the layer of deposited compounds, which mainly consist of WC, W2 C, C, and 4H-SiC, was relatively thin. © 2006 American Institute of Physics.
Publisher	American Institute of Physics
Source Title	Journal of Applied Physics
Volume (Issue)	100(9)
Page	096107
Date of Issued	2006-11-01
Language	English
Handle URL	https://hdl.handle.net/11094/78481
PISSN	00218979
NCID	AA00693547
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1063/1.2364050
Access Rights	open access
CopyRight	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 100, 096107 (2006) and may be found at https://doi.org/10.1063/1.2364050.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCTERMS.bibliographicCitation	Journal of Applied Physics. 2006, 100(9), p. 096107
DC.title	Temporal evolution of ion fragment production from methylsilane by a hot tungsten wire
DC.creator	Yoshimura, Satoru
	Toh, Akinori
	Toyoshima, Takahiro
	Kiuchi, Masato
	Hamaguchi, Satoshi
DC.publisher	American Institute of Physics
DC.language' scheme='DCTERMS.RFC1766	English
DCTERMS.issued' scheme='DCTERMS.W3CDTF	2006-11-01
DC.identifier	https://doi.org/10.1063/1.2364050
DC.description	S. Yoshimura et al., Journal of Applied Physics 100, 096107 (2006) https://doi.org/10.1063/1.2364050
DCTERMS.abstract	Temporal evolution of ion fragment production from gaseous methylsilane in contact with a hot tungsten wire was measured with a use of a low-energy mass analyzed ion beam system. The mechanisms of molecular fragmentation in the system are similar to those for typical catalytic chemical vapor deposition processes. The fragmentation rates vary during the process due to surface modification of the tungsten wire. The extent of surface modification depends on the tungsten temperature. When the tungsten temperature was set to 1940 °C, ion fragments were produced initially but the production terminated about 1 h after the start of the experiment. The termination of ion production seems to be caused by the formation of a thick 3C-SiC layer on the tungsten surface, which was identified by x-ray diffraction measurement. When the tungsten temperature was set to 2220 °C, ion fragment production continued at least for 8 h. In this case the layer of deposited compounds, which mainly consist of WC, W2 C, C, and 4H-SiC, was relatively thin. © 2006 American Institute of Physics.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 100, 096107 (2006) and may be found at https://doi.org/10.1063/1.2364050.
DC.format	78481
citation_title	Temporal evolution of ion fragment production from methylsilane by a hot tungsten wire
citation_author	Yoshimura, Satoru
	Toh, Akinori
	Toyoshima, Takahiro
	Kiuchi, Masato
	Hamaguchi, Satoshi
citation_publisher	American Institute of Physics
citation_language	English
citation_date	2006-11-01
citation_journal_title	Journal of Applied Physics
citation_volume	100
citation_issue	9
citation_firstpage	096107
citation_doi	https://doi.org/10.1063/1.2364050
citation_public_url	https://hdl.handle.net/11094/78481

Temporal evolution of ion fragment production from methylsilane by a hot tungsten wire

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