Molecular dynamics simulation of silicon and silicon dioxide etching by energetic halogen beams

Ohta, H.; Hamaguchi, S.

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films, 2001, 19(5), 2373-2381

Number of Access:383（2025-08-28 19:19 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/78493

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Title
Molecular dynamics simulation of silicon and silicon dioxide etching by energetic halogen beams
Creator
CreatorName
Ohta, H.
NRID
1000060301826 1000060301826
ORCID
0000-0001-6580-8797 0000-0001-6580-8797
researchmap permalink
satoshi_hamaguchi satoshi_hamaguchi
Scopus Author ID
55220082400 55220082400
CreatorName
Hamaguchi, S.
Description
H. Ohta and S. Hamaguchi, Journal of Vacuum Science & Technology A 19, 2373 (2001) https://doi.org/10.1116/1.1385906
Abstract
Molecular dynamics (MD) simulations for silicon and silicon dioxide etching by energetic halogens (F, or Cl), using new sets of interatomic potentials were performed. Sputtering yields for silicon and oxide targets was obtained from the MD simulations. Simultions also showed different target surface structures for fluorine and chlorine beam etching processes, which were accounted for by the difference in atomic size and binding energy between fluorine and chlorine.
Publisher
American Institute of Physics
Source Title
Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume (Issue)
19(5)
Page
2373-2381
Date of Issued
2001-09
Language
English
Handle URL
https://hdl.handle.net/11094/78493
PISSN
07342101
NCID
AA10635514
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.1116/1.1385906
Access Rights
open access
CopyRight
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Vacuum Science & Technology A 19, 2373 (2001) and may be found at https://doi.org/10.1116/1.1385906.
oaire:version
Version of Record
Category
学術雑誌論文 Journal Article