Across-wafer nonuniformity of long throw sputter deposition

Mayo, A. A.; Hamaguchi, S.; Joo, J. H. et al.

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1997, 15(5), 1788-1793

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Identifier to cite or link to this item: https://hdl.handle.net/11094/78498

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Title
Across-wafer nonuniformity of long throw sputter deposition
Creator
CreatorName
Mayo, A. A.
NRID
1000060301826 1000060301826
ORCID
0000-0001-6580-8797 0000-0001-6580-8797
researchmap permalink
satoshi_hamaguchi satoshi_hamaguchi
Scopus Author ID
55220082400 55220082400
CreatorName
Hamaguchi, S.
CreatorName
Joo, J. H.
CreatorName
Rossnagel, S. M.
Description
A. A. Mayo et al., Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 15, 1788 (1997) https://doi.org/10.1116/1.589526
Abstract
Physical sputter deposition has been used at longer-than-normal cathode-to-sample distances for semi-directional deposition within high aspect ratio features. "Long throw" sputter deposition can be advantageous over other means of directional sputtering, such as collimated sputter deposition, because of the absence of collimators and related problems. However, due to the finite target size and sample geometry, an asymmetry is observed at the wafer edge with a thicker deposit on the inward-facing walls of trench and via structures compared with the outward-facing walls. We have used numerical simulation as well as metal sputter deposition experiments to characterize this asymmetry, which is typically 2-3:1 at the wafer edge. We also discuss how ionized sputter deposition would alter the deposition profile in the edge region. © 1997 American Vacuum Society.
Publisher
American Institute of Physics Inc.
Source Title
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume (Issue)
15(5)
Page
1788-1793
Date of Issued
1997-09
Language
English
Handle URL
https://hdl.handle.net/11094/78498
PISSN
10711023
NCID
AA10804928
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.1116/1.589526
Access Rights
open access
CopyRight
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 15, 1788 (1997) and may be found at https://doi.org/10.1116/1.589526.
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Version of Record
Category
学術雑誌論文 Journal Article