Ionized physical vapor deposition of Cu for high aspect ratio damascene trench fill applications

Nichols, C. A.; Rossnagel, S. M.; Hamaguchi, S.

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1996, 14(5), 3270-3275

Number of Access:473（2025-08-28 17:11 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/78501

Link to primary information 

File Format Terms of use Size Views Date.Available Description information
JVacSciTechnolB_14_05_3270 pdf None 2.23 MB 223 2021.02.05  

Item Information

Output File Export EndNote Basic Export Mendeley

Title
Ionized physical vapor deposition of Cu for high aspect ratio damascene trench fill applications
Creator
CreatorName
Nichols, C. A.
CreatorName
Rossnagel, S. M.
NRID
1000060301826 1000060301826
ORCID
0000-0001-6580-8797 0000-0001-6580-8797
researchmap permalink
satoshi_hamaguchi satoshi_hamaguchi
Scopus Author ID
55220082400 55220082400
CreatorName
Hamaguchi, S.
Description
C. A. Nichols et al., Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 14, 3270 (1996) https://doi.org/10.1116/1.588819
Abstract
The ionized physical vapor deposition technique is used to fill high aspect ratio trenches with copper. This technique allows directional filling of embedded features, known as damascene, by sputtering metal atoms into a high density plasma. Large metal-atom ionized-flux fractions are achievable (≈85%) leading to high directionality of deposition at the biased substrate. In this article, we report quantitative measurements of fill directionality of Cu using an inductively coupled plasma (ICP) high density source. Copper is deposited into fairly aggressive (depth/width ≤1.5) damascene trenches. Metal ion flux fractions are estimated from direct measurement of the trench step coverage and compared to simulation. Estimates of the Cu+/Ar+ density ratios are also made to understand the influence of applied ICP power and Cu atom density (magnetron power) on fill directionality. It is found that at high magnetron powers (high copper atom densities) the plasma becomes "copper rich," where the flux of copper ions exceeds that of the argon ions. At low magnetron power and high ICP power, we find the trench fill to be highly directional. As magnetron power is increased, directionality suffers due to cooling of the plasma by higher copper atom flux. © 1996 American Vacuum Society.
Publisher
American Institute of Physics Inc.
Source Title
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume (Issue)
14(5)
Page
3270-3275
Date of Issued
1996-09
Language
English
Handle URL
https://hdl.handle.net/11094/78501
PISSN
10711023
NCID
AA10804928
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.1116/1.588819
Access Rights
open access
CopyRight
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 14, 3270 (1996) and may be found at https://doi.org/10.1116/1.588819.
oaire:version
Version of Record
Category
学術雑誌論文 Journal Article