Thin, high atomic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applications

Rossnagel, S. M.; Nichols, C.; Hamaguchi, S.; Ruzic, D.; Turkot, R.

doi:https://doi.org/10.1116/1.588562

Thin, high atomic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applications

Rossnagel, S. M.; Nichols, C.; Hamaguchi, S. et al.

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1996, 14(3), 1819-1827

Number of Access:499（2025-08-28 19:19 Counts）

Identifier to cite or link to this item: https://hdl.handle.net/11094/78502

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Title	Thin, high atomic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applications
Creator	CreatorName Rossnagel, S. M.
	CreatorName Nichols, C.
	NRID 1000060301826 1000060301826 ORCID 0000-0001-6580-8797 0000-0001-6580-8797 researchmap permalink satoshi_hamaguchi satoshi_hamaguchi Scopus Author ID 55220082400 55220082400 CreatorName Hamaguchi, S.
	CreatorName Ruzic, D.
	CreatorName Turkot, R.
Description	S. M. Rossnagel et al., Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 14, 1819 (1996) https://doi.org/10.1116/1.588562
Abstract	Thin, nearly conformal films are required for semiconductor applications to function as diffusion barriers, adhesion layers and seed layers within trenches and vias. The deposition of high mass refractory films with conventional, noncollimated magnetron sputtering at low pressures shows better-than-expected conformality which is dependent on the degree of directionality of the depositing atoms: the conformality increases as the directionality increases. The primary cause appears to be a strongly angle-dependent reflection coefficient for the depositing metal atoms. As the deposition is made more directional by increasing the cathode-to-sample distance, the depositing atoms are more likely to reflect from the steep sidewalls, leading to better conformality as well as a less columnar film structure. © 1996 American Vacuum Society.
Publisher	American Institute of Physics Inc.
Source Title	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume (Issue)	14(3)
Page	1819-1827
Date of Issued	1996-03
Language	English
Handle URL	https://hdl.handle.net/11094/78502
PISSN	10711023
NCID	AA10804928
Relation.isIdenticalTo	DOI (Publisher Version) https://doi.org/10.1116/1.588562
Access Rights	open access
CopyRight	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 14, 1819 (1996) and may be found at https://doi.org/10.1116/1.588562.
oaire:version	Version of Record
Category	学術雑誌論文 Journal Article

Resource Type	journal article
Local Type	Journal Article
DCTERMS.bibliographicCitation	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1996, 14(3), p. 1819-1827
DC.title	Thin, high atomic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applications
DC.creator	Rossnagel, S. M.
	Nichols, C.
	Hamaguchi, S.
	Ruzic, D.
	Turkot, R.
DC.publisher	American Institute of Physics Inc.
DC.language' scheme='DCTERMS.RFC1766	English
DCTERMS.issued' scheme='DCTERMS.W3CDTF	1996-03
DC.identifier	https://doi.org/10.1116/1.588562
DC.description	S. M. Rossnagel et al., Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 14, 1819 (1996) https://doi.org/10.1116/1.588562
DCTERMS.abstract	Thin, nearly conformal films are required for semiconductor applications to function as diffusion barriers, adhesion layers and seed layers within trenches and vias. The deposition of high mass refractory films with conventional, noncollimated magnetron sputtering at low pressures shows better-than-expected conformality which is dependent on the degree of directionality of the depositing atoms: the conformality increases as the directionality increases. The primary cause appears to be a strongly angle-dependent reflection coefficient for the depositing metal atoms. As the deposition is made more directional by increasing the cathode-to-sample distance, the depositing atoms are more likely to reflect from the steep sidewalls, leading to better conformality as well as a less columnar film structure. © 1996 American Vacuum Society.
DC.rights	This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 14, 1819 (1996) and may be found at https://doi.org/10.1116/1.588562.
DC.format	78502
citation_title	Thin, high atomic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applications
citation_author	Rossnagel, S. M.
	Nichols, C.
	Hamaguchi, S.
	Ruzic, D.
	Turkot, R.
citation_publisher	American Institute of Physics Inc.
citation_language	English
citation_date	1996-03
citation_journal_title	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
citation_volume	14
citation_issue	3
citation_firstpage	1819
citation_lastpage	1827
citation_doi	https://doi.org/10.1116/1.588562
citation_public_url	https://hdl.handle.net/11094/78502

Thin, high atomic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applications

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