模擬PWR1次系環境にて冷間加工を加えたAlloy600，Alloy690に生成する酸化皮膜の電気化学的性質

金, 輝星; 土谷, 博昭; 佐藤, 眞直 他

材料と環境, 2015, 64(11), 501-507

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Identifier to cite or link to this item: https://hdl.handle.net/11094/82361

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Title
模擬PWR1次系環境にて冷間加工を加えたAlloy600，Alloy690に生成する酸化皮膜の電気化学的性質
Electrochemical Properties of Oxide Films Formed on Cold Worked Alloy600 and Alloy690 in Simulated PWR Primary Water Environments
Creator
CreatorName
金, 輝星 ; Kim, Whee-Sung
NRID
1000050432513 1000050432513
ORCID
0000-0001-5619-0139 0000-0001-5619-0139
researchmap permalink
read0076368 read0076368
Scopus Author ID
7202203364 7202203364
CreatorName
土谷, 博昭 ; Tsuchiya, Hiroaki
NRID
1000030360837 1000030360837
CreatorName
佐藤, 眞直 ; Sato, Masugu
CreatorName
孫, 珍永 ; Son, Jin-Young
CreatorName
町田, 雅武 ; Machida, Masatake
CreatorName
鄭, 起宅 ; Jung, Ki-Taek
NRID
1000070199371 1000070199371
ORCID
0000-0002-7787-4190 0000-0002-7787-4190
researchmap permalink
read0013980 read0013980
Scopus Author ID
57211614674 57211614674
CreatorName
藤本, 愼司 ; Fujimoto, Shinji
Subject
不働態皮膜
高温高圧水
光電気化学応答
XPS
Ni‐Cr合金
溶存水素
passive film
high temperature and high pressure water
photo electrochemical response
Ni-Cr alloys
dissolved hydrogen
Abstract
加圧水型原子炉の一次系冷却水を模擬した高温高圧水中にて，冷間加工を加えたAlloy600，Alloy690に生成する不働態皮膜を光電気化学応答によって評価した．一部の試料について放射光をX線源とする光電子分光法による表面分析を実施した．Alloy600とAlloy690に生成する不働態皮膜は，バンドギャップ3.5 eVのp型半導体としての性質を示す酸化物層と2.3 eVのn型半導体的性質を示す水酸化物層から構成されていることが分かった．しかし，酸化物層中には，一般にp型半導体としての性質を示すNi酸化物はほとんど含まれていなかった．一方，皮膜生成時の溶存水素とこれら合金に対する冷間加工の影響はAlloy600で顕著に現れたがAlloy690ではほとんど見られなかった．すなわち，Alloy600に生成する不働態皮膜は溶存水素により薄くなる．また，冷間加工によってやや厚くなり，保護性が低下することが明らかとなった．
Passive films formed on Alloy 600 and Alloy 690 in the simulated primary water of pressurized water reactor were characterized by photo electrochemical current response focusing on the influence of the dissolved hydrogen and cold working. Some specimens were also analyzed by X-ray photoelectron spectroscopy using the hard X-ray generated by SPring-8. Passive films on both alloys consisted of the oxide layer of p-type semiconductor properties with band gap energy (Eb) of 3.5 eV and the hydroxide layer of n-type semiconductor with Eb of 2.3 eV. However, the content of Ni in the oxide layer which may induce p-type semiconductor property is negligible small. The passive films on Alloy 600 become thinner by dissolved hydrogen, and less protective by cold working. Whereas passive films on Alloy 690, which were more protective than that on Alloy 600, were rarely influenced by cold working and dissolved hydrogen.
Publisher
腐食防食学会
Japan Society of Corrosion Engineering
Source Title
材料と環境
Volume (Issue)
64(11)
Page
501-507
Date of Issued
2015-11-15
Language
Japanese
Handle URL
https://hdl.handle.net/11094/82361
PISSN
09170480
NCID
AN10235427
Relation.isIdenticalTo
DOI (Publisher Version)
https://doi.org/10.3323/jcorr.64.501
Access Rights
open access
oaire:version
Version of Record
Category
学術雑誌論文 Journal Article